Search results for "conductors"

General interpolation scheme for thermal fluctuations in superconductors

2006

We present a general interpolation theory for the phenomenological effects of thermal fluctuations in superconductors. Fluctuations are described by a simple gauge invariant extension of the gaussian effective potential for the Ginzburg-Landau static model. The approach is shown to be a genuine variational method, and to be stationary for infinitesimal gauge variations around the Landau gauge. Correlation and penetration lengths are shown to depart from the mean field behaviour in a more or less wide range of temperature below the critical regime, depending on the class of material considered. The method is quite general and yields a very good interpolation of the experimental data for very…

Phase diagram of dirty two-band superconductors and observability of impurity-induced $s+is$ state

2016

We investigate the phase diagram of dirty two-band superconductors. This paper primarily focuses on the properties and observability of the time-reversal symmetry-breaking $s+is$ superconducting states, which can be generated in two-band superconductors by interband impurity scattering. We show that such states can appear in two distinct ways. First, according to a previously discussed scenario, the $s+is$ state can form as an intermediate phase at the impurity-driven crossover between $s_{\pm}$ and $s_{++}$ states. We show that there is a second scenario where domains of the $s+is$ state exists in the form of an isolated dome inside the $s_{\pm}$ domain, completely detached from the transi…

Fractional-Order Theory of Thermoelasticity. II: Quasi-Static Behavior of Bars

2018

This work aims to shed light on the thermally-anomalous coupled behavior of slightly deformable bodies, in which the strain is additively decomposed in an elastic contribution and in a thermal part. The macroscopic heat flux turns out to depend upon the time history of the corresponding temperature gradient, and this is the result of a multiscale rheological model developed in Part I of the present study, thereby resembling a long-tail memory behavior governed by a Caputo's fractional operator. The macroscopic constitutive equation between the heat flux and the time history of the temperature gradient does involve a power law kernel, resulting in the anomaly mentioned previously. The interp…

Screening of positrons in semiconductors and insulators

1989

Theoretical models are presented for the enhancement of the electron density at a positron in a semiconductor or insulator host. The model better suited for typical semiconductors is based on the many-body theory for the screening of a positron in electron gas. The starting point of the model for insulators is the atomic polarizability. The common parameter in both models is the high-frequency dielectric constant. Moreover, the enhancement depends on the ambient electron density in the semiconductor model and on the unit-cell volume in the insulator model. With use of the models developed, positron lifetimes in perfect semiconductor and insulator crystals have been calculated. In the calcul…

Solution processed pentacene thin films: new routes for building-up plastic field effect transistors

2008

Semiconductor @ sensitizer composites for enhanced photoinduced processes

2021

This Chapter provides an overview of common procedures used for the preparation, characterization, and exploration of photocatalytic properties of composite materials based on inorganic semiconductors in combination with sensitizers, such as porphyrins, phthalocyanines, and related macrocyclic compounds as promoters of photoinduced processes. In this context the advantage of hybrid photocatalysts, obtained by impregnation of photosensitizers onto the surface of different semiconductors, designed for improving a choice of diverse reactions has been demonstrated, highlighting innovative aspects that contribute to better sustainability of the photocatalytic processes. Mechanistic details conce…

Improvements in H2/O2 thin film fuel cell working with Porous Anodic Alumina-supported electrolytes

2009

Failure analysis of normally-off GaN HEMTs under avalanche conditions

2020

Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…

Lattice Dynamics Study of HgGa2Se4 at High Pressures

2013

We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high pressures which agree with experiments. Measurements evidence that the semiconductor HgGa2Se4 exhibits a pressure-induced phase transition above 19 GPa to a previously undetected structure. This transition is followed by a transformation to a Raman-inactive phase above 23.4 GPa. On downstroke from 25 GPa until 2.5 GPa, a broad Raman spectrum was observed, which has been attributed to a fourth phase, and whose pressure dependence was followed during a second upstroke. Candidate …

Raman Scattering Applied to Materials Science

2015

Abstract One of the most powerful techniques to extract physical and chemical information of a material is the light scattering. Opposite to x-ray scattering for instance, where an average of the sample properties is obtained, Raman scattering is a local probe which can be used to detect inhomogeneities, local strain, lack of crystallinity, anharmonicities or information on the electronic structure by means of resonant Raman scattering. In this work, we will analyze the main contributions of Raman scattering in Materials Sciences. After a brief introduction of the technique and the equipment needed for the physical measurements, we will give practical examples of Raman scattering measuremen…