Search results for "defect"
showing 10 items of 879 documents
Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies
1991
High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV {sup 3}He{sup 2} ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects in Si. The results have been compared with those of proton-irradiated Si. A 100--300-K annealing stage was clearly observed in hydrogen (H{sup +}) -implanted Si, and this stage was almost identical to that in the {ital p}-irradiated Si. The final annealing state of the H{sup +}-implanted Si started at about 400 K, and it is connected to annealing out of negatively charged divacancy-oxy…
Excitation of different chromium centres by synchrotron radiation in MgO:Cr single crystals
2015
The excitation spectra for the emissions of chromium-containing centres have been measured at 10 K using synchrotron radiation of 4–32 eV in MgO single crystals with different content of Cr$^{3+}$ (5–850 ppm) and Ca$^{2+}$ impurity ions. Both virgin crystals and the samples preliminarily irradiated with x-rays at 295 K have been studied. The role of complex chromium centres containing two Cr$^{3+}$ and a cation vacancy (sometimes nearby a Ca$^{2+}$ ion) on the luminescence processes and the transformation/creation of structural defects has been analysed. Such anharmonic complex centres could serve as the seeds for the creation of 3D defects that facilitate the cracking and brittle destructi…
First-Principles Simulations of Interstitial Atoms in Ionic Solids
1995
The atomic and electronic structure of the radiation-induced interstitial atoms in MgO and KCl crystals representing two broad classes of ionic solids are calculated and compared. The first-principles full potential LMTO method is applied to a 16-atom supercell. For both crystals the energetically most favourable configuration is a dumbbell centered at a regular anion site. Its (110) and (111) orientations are very close in energy which permits the dumbbell to rotate easily on a lattice site. The mechanism and the relevant activation energy for thermally activated diffusion hops from the dumbbell equilibrium position to the cube face and cube center are discussed in the light of the availab…
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
2021
Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…
Ge-doped silica nanoparticles: production and characterisation
2016
Silica nanoparticles were produced from germanosilicate glasses by KrF laser irradiation. The samples were investigated by cathodoluminescence and scanning electron microscopy, providing the presence of nanoparticles with size from tens up to hundreds of nanometers. The emission of the Germanium lone pair center is preserved in the nanoparticles and atomic force microscopy revealed the presence of no spherical particles with a size smaller than ~4 nm. The absorption coefficient enhancement induced by Ge doping is reputed fundamental to facilitate the nanoparticles production. This procedure can be applied to other co-doped silica materials to tune the nanoparticles features.
Recombination in Perovskite Solar Cells
2017
Trap-assisted recombination, despite being lower as compared with traditional inorganic solar cells, is still the dominant recombination mechanism in perovskite solar cells (PSCs) and limits their efficiency. We investigate the attributes of the primary trap assisted recombination channels (grain boundaries and interfaces) and their correlation to defect ions in PSCs. We achieve this by using a validated device model to fit the simulations to the experimental data of efficient vacuum-deposited p-i-n and n-i-p CH3NH3PbI3 solar cells, including the light intensity dependence of the open circuit voltage and fill factor. We find that, despite the presence of traps at interfaces and grain bounda…
Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples
2021
The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatments in a reductive atmosphere in order to introduce defects in the samples in a controlled way. A detailed structural analysis is carried out in order to characterize the induced defects and their concentration. The magnetometry revealed the coexistence of a paramagnetic and a ferromagnetic phase …
Zero-field magnetometry based on nitrogen-vacancy ensembles in diamond
2018
Ensembles of nitrogen-vacancy (NV) centers in diamonds are widely utilized for magnetometry, magnetic-field imaging and magnetic-resonance detection. They have not been used for magnetometry at zero ambient field because Zeeman sublevels lose first-order sensitivity to magnetic fields as they are mixed due to crystal strain or electric fields. In this work, we realize a zero-field (ZF) magnetometer using polarization-selective microwave excitation in a 12C-enriched HPHT crystal sample. We employ circularly polarized microwaves to address specific transitions in the optically detected magnetic resonance and perform magnetometry with a noise floor of 250 pT/Hz^(1/2). This technique opens the …
Quantum chemical simulations of the optical properties and diffusion of electron centres in mgo crystals
1996
Semiempirical quantum chemical simulations have been undertaken to obtain the self-consistent atomic and electronic structure of the two basic electron defects in MgO crystals: F+ and F centres (one and two electrons trapped by an 0 vacancy, V,). The calculated absorption and luminescence energies agree well with the experimental data; the excited states of both defects are found to be essentially delocalised over nearest-neighbour cations. The activation energy for diffusion is found to increase monotonically in a series V, --f F+ --f F centre (2.50 eV, 2.72 eV and 3.13 eV, respectively).
Characterization of microscopic ferromagnetic defects in thin films using magnetic microscope based on Nitrogen-Vacancy centres
2020
In this work we present results acquired by applying magnetic field imaging technique based on Nitrogen-Vacancy centres in diamond crystal for characterization of magnetic thin films defects. We used the constructed wide-field magnetic microscope for measurements of two kinds of magnetic defects in thin films. One family of defects under study was a result of non-optimal thin film growth conditions. The magnetic field maps of several regions of the thin films created under very similar conditions to previously published research revealed microscopic impurity islands of ferromagnetic defects, that potentially could disturb the magnetic properties of the surface. The second part of the measur…