Search results for "defect"
showing 10 items of 879 documents
Light majoron cold dark matter from topological defects and the formation of boson stars
2019
We show that for a relatively light majoron ($\ll 100 $ eV) non-thermal production from topological defects is an efficient production mechanism. Taking the type I seesaw as benchmark scheme, we estimate the primordial majoron abundance and determine the required parameter choices where it can account for the observed cosmological dark matter. The latter is consistent with the scale of unification. Possible direct detection of light majorons with future experiments such as PTOLEMY and the formation of boson stars from the majoron dark matter are also discussed.
Use of site symmetry in supercell models of defective crystals: Polarons in CeO2
2017
The authors thank R. Merkle and G. W. Watson for stimulating discussions. E. K. also acknowledges partial financial support from the Russian Science Foundation for the study of charged defects under the project 14-43-00052. A. C. also acknowledges financial support from the University of Latvia Foundation (Arnis Riekstins's "MikroTik" donation). E. K. and D. G. express their gratitude to the High Performance Computer Centre in Stuttgart (HLRS, project DEFTD 12939) for the provided computer facilities whereas R. A. E. thanks the St. Petersburg State University Computer Center for assistance in high-performance calculations.
Screening of positrons in semiconductors and insulators
1989
Theoretical models are presented for the enhancement of the electron density at a positron in a semiconductor or insulator host. The model better suited for typical semiconductors is based on the many-body theory for the screening of a positron in electron gas. The starting point of the model for insulators is the atomic polarizability. The common parameter in both models is the high-frequency dielectric constant. Moreover, the enhancement depends on the ambient electron density in the semiconductor model and on the unit-cell volume in the insulator model. With use of the models developed, positron lifetimes in perfect semiconductor and insulator crystals have been calculated. In the calcul…
Theoretical study of the discrete and continuum spectrum of BeH
2008
The transition intensities supplied in this Letter are directly connected with a description of the discrete and continuum spectrum of BeH. An attempt to meet our goal requires the calculation of the absorption oscillator strengths of several transitions to Rydberg states of BeH, together with differential oscillator strengths which give rise to different dipole-allowed photoionization channels from the molecular ground state. The calculations have been performed with the molecular-adapted quantum defect orbital (MQDO) approach. Predictions of new spectroscopic data on BeH at energies where high Rydberg transitions can take place, including the continuum region of the spectrum have been mad…
General principles in motion vision: Color blindness of object motion depends on pattern velocity in honeybee and goldfish
2011
AbstractVisual systems can undergo striking adaptations to specific visual environments during evolution, but they can also be very “conservative.” This seems to be the case in motion vision, which is surprisingly similar in species as distant as honeybee and goldfish. In both visual systems, motion vision measured with the optomotor response is color blind and mediated by one photoreceptor type only. Here, we ask whether this is also the case if the moving stimulus is restricted to a small part of the visual field, and test what influence velocity may have on chromatic motion perception. Honeybees were trained to discriminate between clockwise- and counterclockwise-rotating sector disks. S…
Conformational heterogeneity of the point defects in Silica Glasses: Study of the lifetime of 2.7 eV phosphorescence band
2006
Temperature dependence of the absorption properties of silanol groups in amorphous SiO2: Are silanol groups organized in clusters?
2011
Bi3+doping in 1D ((CH3)3SO)PbI3: A model for defect interactions in halide perovskites
2022
The recently described monodimensional hybrid pseudo-perovskite ((CH3)3SO)PbI3 exhibits complete Pb2+/Bi3+ miscibility in the B site. Heterovalent substitution imposes that charge-compensating defects are introduced in the lattice as well. This paper reports the energetics of point defects and the interaction between charge-compensating defects that occur upon Bi3+ doping in ((CH3)3SO)PbI3. Periodic DFT simulations were employed to analyze the formation energy of Pb2+ vacancies, (CH3)3SO+ vacancies, iodide vacancies, or the insertion of interstitial iodide ions. Solid solutions with a large Bi3+ content were modeled considering different charge compensation defects (Pb2+ vacancies, (CH3)3SO…
Vacancies and Carbon Impurities in Iron
1981
Point defects in electron-irradiated high-purity α-iron have been studied by positron lifetime measurements. We show that the migration stage of monovacancies occurs already as low as at 220 K, which results in agglomeration of small three-dimensional vacancy clusters. Furthermore, we irradiated carbon-doped iron specimens, where formation of highly asymmetric monovacancycarbon atom pairs was detected during the migration stage of monovacancies at 220 K.
Characterization of non-polar ZnO layers with positron annihilation spectroscopy
2008
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high 10 cm−3 to low 10 cm−3) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about 2×10 cm−3 in all the samples with thicknesses v…