Search results for "doping"
showing 10 items of 801 documents
Thermal irreversibility in optically labeled low-temperature glasses.
1989
We present an investigation of irreversible features of thermal broadening of persistent spectral holes. The investigation is based on temperature-cycling hole-burning experiments performed with a variety of organic glasses doped with rather different probe molecules. The results show a rich temperature dependence. They can, however, be interpreted in terms of the well-known spectral diffusion models, in which we introduced a freezing condition to account for thermal irreversiblity. There is a tunneling regime for low temperatures and an activated regime for high temperatures. In the tunneling regime the broadening is linear in T; in the activated regime it increases with ${T}^{3/2}$ and lo…
Giant piezoelectricity in B/N doped 4,12,2-graphyne
2020
Abstract The effects of boron (B) and nitrogen (N) substitutions in 4,12,2-graphyne on its geometric structure and mechanical as well as electronic properties have been systematically investigated with the aid of density functional theory (DFT). The trend in the elastic properties of the substituted systems is determined by the doping positions and the type of the dopants. The Bader charge analysis reveals that the N dopant at the sp-site destroys the acetylenic linkage in 4,12,2-graphyne, but instead tends to form a polar bond, or even possibly a charge-shift bond. In particular, an obvious in-plane piezoelectricity is induced by foreign atom substitutions owing to the deformation of the p…
Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)
2010
The substitutional series of Heusler compounds ${\text{NiTi}}_{1\ensuremath{-}x}{M}_{x}\text{Sn}$ (where $M=\text{Sc},\text{V}$ and $0lx\ensuremath{\le}0.2$) were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create $n$-type and $p$-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and compared to the measurements. Hard x-ray photoelectron spectroscopy was carried out and the results are compared to the calculated electronic structure. Pure NiTiSn exhibits massive ``in gap'' states containing about 0.1 ele…
Spontaneous Magnetization in Heterometallic NiFe-MOF-74 Microporous Magnets by Controlled Iron Doping
2017
We report the direct synthesis of mixed-metal NiFe-MOF-74 solids that display combination of porosity with ferrimagnetic ordering. Compared to the undoped Ni phase, controlled doping with Fe enables to modify intra and interchain magnetic interactions for the onset of spontaneous magnetization at temperatures fixed by the doping level. Synthesis of porous magnets remains somewhat elusive due to the difficulties in isolating foreseeable metal-organic architectures that combine small bridging linkers, for strong magnetic coupling, with polyaromatic connectors responsible for porosity. In turn, we demonstrate that metal doping is better fitted to modify the magnetism of Metal-Organic Framework…
Chemical strain effects and changed lattice dynamic in (Sr1-1.5xBix)TiO3ceramics (x ≤ 0.15)
2016
ABSTRACTIn this work lattice strain (induced by chemical Bi substitution on A-site) effects on the lattice dynamic of SrTiO3 ceramics were investigated by broadband dielectric spectroscopy in the very broad frequency range from 10 mHz up to 30 GHz and temperatures from 30 K to 500 K. Obtained results confirmed predicted induce of the ferroelectricity and suppression of the structural phase transition due to substitution of A-site ions – chemical straining of the lattice, both happening at the local scale but evident in macroscopic dielectric spectroscopy measurements. Calculated relaxation time distribution function broadens towards the longest relaxation times with temperature decrease and…
Optimum Carrier Concentration in n-Type PbTe Thermoelectrics
2014
Taking La- and I-doped PbTe as an example, the current work shows the effects of optimizing the thermoelectric figure of merit, zT, by controlling the doping level. The high doping effectiveness allows the carrier concentration to be precisely designed and prepared to control the Fermi level. In addition to the Fermi energy tuning, La-doping modifies the conduction band, leading to an increase in the density of states effective mass that is confirmed by transport, infrared reflectance and hard X-ray photoelectron spectroscopy measurements. Taking such a band structure modification effect into account, the electrical transport properties can then be well-described by a self-consistent single…
Thermoelectric properties of Sr_3GaSb_3 – a chain-forming Zintl compound
2012
Inspired by the promising thermoelectric properties in the Zintl compounds Ca_3AlSb_3 and Ca_5Al_2Sb_6, we investigate here the closely related compound Sr_3GaSb_3. Although the crystal structure of Sr_3GaSb_3 contains infinite chains of corner-linked tetrahedra, in common with Ca_3AlSb_3 and Ca_5Al_2Sb_6, it has twice as many atoms per unit cell (N = 56). This contributes to the exceptionally low lattice thermal conductivity (κ_L = 0.45 W m^(−1) K^(−1) at 1000 K) observed in Sr_3GaSb_3 samples synthesized for this study by ball milling followed by hot pressing. High temperature transport measurements reveal that Sr_3GaSb_3 is a nondegenerate semiconductor (consistent with Zintl charge-coun…
Strain effects and phonon-plasmon coupled modes in Si-doped AlN
2009
The E 2h and A 1 (LO) phonon modes of AlN films grown on sapphire are analyzed by Raman scattering as a function of silicon doping for concentrations covering from 5.5 x 10 19 cm ―3 to 5.2 x 10 21 cm ―3 . For high doping levels the appearance of a mode around 520 cm ―1 indicates the precipitation of crystalline silicon in the samples and its inhomogeneous incorporation to the AlN layer. The frequency of this mode shifts to lower energies with doping, indicating that the silicon crystals are embedded in the AlN lattice and under tensile strain. On the other hand, the AlN phonon modes are blue-shifted due to the compressive strain as a result of the silicon incorporation. This strain is parti…
Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film
2004
The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of…
Thermal conductivity of thermoelectric Al-substituted ZnO thin films
2013
ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross-plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in-plane power factor and the cross-plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in-plane than cross-plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinh…