Search results for "doping"

Improving the Long‐Term Stability of Doped Spiro‐Type Hole‐Transporting Materials in Planar Perovskite Solar Cells

2021

The improvement of the long-term stability of perovskite-based solar cells (PSCs) toward commercialization is closely linked to the development of cutting-edge charge-transporting materials. The progress on the design and the synthesis of new hole-transporting materials (HTMs) is synergistically attaining both top efficiencies and promising stability. Herein, the synthesis and characterization of two doped-HTMs based on electron-rich spiranic cores, namely, 9H-quinolinophenoxazine (spiro-POZ) and 9H-quinolinophenothiazine (spiro-PTZ), are presented. The novel HTMs exhibit excellent solubility, optimal highest occupied molecular orbital energy, and excellent thermal stability with glass tran…

Study of upconversion in highly Er-doped photonic crystal fibers through laser-transient dynamics

2014

The dynamic response after pump switch-on of a 980 nm pumped-ring laser based on an active photonic crystal fiber with an Er3+ ion concentration of ≈1020 ions cm−3 was registered. Then a numerical fitting procedure of a theoretical model was followed to the experimental values of the relaxation oscillation parameters as a function of the input pump power. Non-radiative energy-transfer mechanisms’ coefficients: homogeneous upconversion coefficient (Cup) and critical radii for upconversion (Ru) and migration (Rm) were determined. The calculated best-fit coefficients (Cup = 1.3  ×  10−24 m3 s−1, Ru = 9  ×  10−10 m, Rm = 13  ×  10−10 m) were compared to those obtained with other steady-state an…

Enabling long-term stable FAPb1-xSrxI3 quantum dots with high optical performance: the effect of Sr2+ doping

2021

Revisiting the electronic properties of Molecular Semiconductor – Doped Insulator (MSDI) heterojunctions through impedance and chemosensing studies

2015

Abstract The core activity of this work was to give a new interpretation of the electronic behavior of Molecular Semiconductor – Doped Insulator heterojunctions (MSDI), a new organic device combining two molecular materials with very different electronic properties. We focused on understanding the phenomenon occurring at the interface of fluorinated and non-fluorinated phthalocyanines that appears to be a determining factor for the electronic charge transport in the two-component thin film and ultimately deciding the nature of gas sensing, as illustrated with ozone and ammonia chosen as examples of accepting and donating gases. The impedance measurements showed that the Schottky contact bet…

Molecular Semiconductors — Doped Insulator (MSDI) heterojunctions as new conductometric devices for chemosensing in wet atmosphere.

2015

Most of the gas sensors are based on resistors with inorganic materials and more rarely on other conductometric devices (diodes or transistors). Conductometric sensors have also been designed with molecular materials. Thus, in 2009, Molecular Semiconductor — Doped-insulator (MSDI) heterojunctions were built around a heterojunction between a molecular semiconductor (MS) and a doped-insulator (DI). The MS must be more conductive than the sublayer to take advantage of the heterojunction. The MS is generally of p-type and DI can be of p-type (p-MSDI) or n-type (n-MSDI) material. The energy barrier at the interface depends on the difference in the charge carrier density in the two layers, leadin…

TSL and fractional glow study of Ge-doped α-quartz

2013

Crystalline α-quartz doped with 0.1wt% and 0.9wt% germanium was studied using TSL and FGT equipment. Sample was chosen because previously it is known that Ge in quartz is efficient trap for electrons, therefore it could be used for detection of hypothetic self-trapped hole in α-quartz. However previous investigations of ODMR and TSL shows that in α-quartz the hole is still mobile and trapping occurs only on defect states. The activation energies for both TSL peaks are found by fractional glow and Hoogenstraaten method. The TSL distribution changes depending on Ge concentration and also on irradiation type. The TSL peaks below 70K in quartz doped with Ge could belong to hole trapped on Ge.

Low Temperature Afterglow from SrAl <sub>2</sub>O <sub>4</sub>: EU, Dy, B Containing Glass

2020

SrAl2O4: Eu, Dy, B particles were added in a phosphate glass (90NaPO3-10NaF (in mol%)) using the direct doping method. For the first time, the composition of the particles prior to and after embedding them in the glass was analysed using EPMA analysis. Boron was found to be incorporated in already distorted surroundings creating new trapping centers in the particles which are thought to be favourable for the tunnelling process and so for the afterglow at 10K. Despite the partial decomposition of the particles, the glass exhibit afterglow at low temperature confirming to be promising materials for low temperature applications.

Critical temperature modification of low dimensional superconductors by spin doping

2007

Ion implantation of Fe and Mn into Al thin films was used for effective modification of Al superconductive properties. Critical temperature of the transition to superconducting state was found to decrease gradually with implanted Fe concentration. it was found that suppression by Mn implantation much stronger compared to Fe. At low concentrations of implanted ions, suppression of the critical temperature can be described with reasonable accuracy by existing models, while at concentrations above 0.1 at.% a pronounced discrepancy between the models and experiments is observed.

Dielectric and acoustic properties of modified barium titanate ceramics

2019

This work was supported in part by the Ministry of Education and Science of the Russian Federation.

Magnetron sputtering fabrication of α-Al2O3:Cr powders and their thermoluminescence properties

2018

The authors gratefully acknowledge the financial support for this work from research grant ERA.NET RUS Plus Nr.609556.