Search results for "doping"
showing 10 items of 801 documents
Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate
2013
We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at…
Photoelectrochemical study of passive films on stainless steel in neutral solutions
1991
Abstract Passive films formed on AISI 304 stainless steel in neutral solutions are studied using photoelectrochemical technique. Photocurrents were investigated as a function of the wavelength of the incident light, the electrode potential and the time. The results of the measurements together with capacity measurements indicate that the passive film on AISI 304 shows characteristics of a highly doped amorphous or highly disordered n-type semiconductor. The potential dependence of the optical gap values and of the photocurrent transients can be interpreted assuming that the passive film is an iron-chromium oxide solid solution.
Low-Temperature Atomic Layer Deposition of Crystalline and Photoactive Ultrathin Hematite Films for Solar Water Splitting
2015
We developed a low-temperature atomic layer deposition route to deposit phase pure and crystalline hematite (alpha-Fe2O3) films at 230 degrees C without the need for postannealing. Homogenous and conformal deposition with good aspect ratio coverage was demonstrated on a nanostructured substrate and analyzed by transmission electron microscopy. These as-deposited alpha-Fe2O3 films were investigated as photoanodes for photoelectrochemical water oxidation and found to be highly photoactive. Combined with a TiO2 underlayer and a low-cost Ni(OH)(2) catalyst, hematite films of less than 10 nm in thickness reached photocurrent densities of 0.3 mA cm(-2) at 1.23 V vs RHE and a photocurrent onset po…
PV and magnetic field effects in poly(3-hexylthiophene)-fullerene cells doped with phthalocyanine soluble derivative
2007
An attempt was made to widen the photosensitivity spectral range of poly(3-hexylthiophene)-fullerene blend by adding an extra electron donor — a newly synthesized soluble phthalocyanine derivative (SnClPc) having the electron absorption band at 708 nm. As the electron acceptor, home-synthesised di(ethoxycarbonyl) methano-fullerene carboxylate (C 61 (CO 2 Et) 2 ) was used, and as the hole transporter — the regioregular poly 3-hexylthiophene (P3HT). The sandwich-type samples were prepared on an ITO glass substrate by coating it with a 30–50 nm thick PEDOT:PSS layer followed by a ~100 nm thick P3HT:C 61 (CO 2 Et) 2 :SnClPc blend. For the top electrodes In or Au were used. Spectral dependences …
<title>Localized excitons in fluoroperovskite LiBaF<formula><inf><roman>3</roman></inf></formula> crystals&…
2003
Two radiating processes in LiBaF3 crystals, fast valence-core transitions (5.4 - 6.5 eV) and slow, so called self-trapped exciton luminescence (about 4.3 eV), are important for practical application. Here we present a study of 4.3 eV luminescence under X-ray excitation and photoexcitation as well as under photostimulation after X-irradiation of undoped and Ag-doped LiBaF3 crystals at various temperatures. It is shown that 4.3 eV luminescence appears under X-ray excitation at least from 85 K to 400 K in both undoped and doped crystals. In all samples studied the excitation spectra of 4.3 eV luminescence contain both the main exciton like band at the edge of fundamental absorption at about 10…
Energy transport in silica to oxygen-deficient luminescence centers. Comparison with other luminescence centers in silica and α-quartz
2004
Abstract The transport of energy absorbed by silica glass to oxygen-deficient luminescence centers in was studied in the range of intrinsic absorption from 8.2 up to 35 eV. The low efficiency of exciting those luminescence centers by transport of energy could not be ascribed merely to carrier scattering by the disordered structure. Other centers (Cu + , for example) could be excited in such process with sufficiently high efficiency, albeit lower than that in crystals. The low efficiency of interaction of oxygen deficient centers with quasi-particles is attributed to isolation of these centers in clusters and the non-radiative annihilation of the quasi-particles on the boundaries of these cl…
Concentration growth and thermal stability of gamma-ray induced germanium lone pair center in Ge-doped sol–gel a-SiO2
2009
Abstract We report an experimental study of the concentration growth by γ-ray irradiation of germanium lone pair center (GLPC) in 10 4 part per million molar Ge-doped sol–gel silica. The data show that γ-ray induced GLPC concentration increases linearly up to ∼5 MGy and then it seems to reach a limit value. In addition to the dose dependence, we have studied the thermal stability of the radiation induced GLPC in ambient atmosphere up to 415 °C. We found that the concentration of this latter GLPC starts to decrease at ∼300 °C, at variance to native GLPC, suggesting that the annealing is related to irradiation products. After the thermal treatments the photoluminescence (PL) activity of the γ…
Luminescence of fluorine-doped and non-doped silica glass excited with an ArF laser
2004
Abstract The role of fluorine doping on silica has been studied through comparison of the luminescence of fluorine doped and fluorine-free samples made by melting in on SiF4 atmosphere and excited by an ArF laser (6.4 eV) in the temperature range 10–290 K. The fluorine doped sample possesses a very weak absorption band at 7.6 eV on the level of 0.1 cm−1 and there the photoluminescence of so-called oxygen-deficient centers in the blue (2.7 eV) and UV bands (4.4 eV) could be excited. The same luminescence bands are observable in the fluorine-free sample, which contains an absorption band at 7.6 eV on the level of 20 cm−1. In the fluorine-doped sample the UV band prevails over the blue band. T…
Gallium doped SiO2: Towards a new luminescent material
2007
We show how the interaction between Ga atoms and silica samples in a hot environment gives rise to permanent inclusions of Ga inside the silica matrix which, in turn, produce typical luminescence features. The Ga doped silica is analyzed via laser induced fluorescence, photoluminescence and electron paramagnetic resonance spectroscopies. The results evidence the presence of modifications induced by the Ga inclusions inside the silica matrix and some preliminary hypothesis on their nature are advanced. Possible applications of such Ga doped silica are also mentioned.
Excitation and emission spectra of LaInO3-based solid solutions doped with Sm3+, Sb3+
2017
Abstract X-ray analysis showed that all the ceramic samples of La 1- x Sm x InO 3 (0.010≤ x ≤0.025) solid solutions were single-phased but the samples of nominal composition of LaIn 0.98 Sb 0.02 O 3 , La 0.98 Sm 0.02 In 0.98 Sb 0.02 O 3 contained a small amount of impurity phase of LaSbO 3 -based solid solutions. It was established that La 0.98 Sm 0.02 InO 3 solid solution under the excitation of 275 nm and 320 nm exhibits the strongest photoluminescence among La 1- x Sm x InO 3 solid solutions with 0.010≤ x ≤0.025. Photoluminescence bands located in wavelength ranges of 550–580 nm, 585–625 nm and 630–680 nm exhibit 2–3 clear maxima each. According to the locations of these maxima we calcul…