Search results for "efficien"

Optical properties of GaSe, characterization and simulation

2021

Abstract The study focuses on structural and optical characterizations and properties of the GaSe lamellar material in one hand and on a numerical simulation of the photovoltaic properties of the ITO/GaSe heterojunction in a second hand. A few layers of GaSe were exfoliated from bulk GaSe on PET substrate. The optical transmission was recorded at room temperature. It shows that GaSe exhibits both indirect and direct band gaps of about 1.92 and 2.2 eV respectively. A value, as high as 104 cm−1, of the absorption coefficient was obtained. The corresponding refractive index has been determined numerically according to the Sellmeier and Cauchy models. The interesting value of absorption shows o…

Application of the reduced I-V Blaesser’s characteristics in predicting PV modules and cells conversion efficiency in medium and high insolation cond…

2017

Abstract The article presents theoretical foundations of application of the reduced I-V Blaesser’s characteristics in predicting a photovoltaic cell/module (PV) efficiency, together with calculation procedures. A detailed analysis of the error of this transformation method of characteristics was carried out. Its practical application in predicting efficiency of operation of various PV cells and modules in medium and high insulation conditions was demonstrated. The practical suitability of the presented method in early detection of ageing phenomena, such as, for example, absorber degradation taking place in PV modules, was demonstrated. The article was prepared on the basis of the results of…

2018

CrN thin films with an N/Cr ratio of 95% were deposited by reactive magnetron sputtering onto (0 0 0 1) sapphire substrates. X-ray diffraction and pole figure texture analysis show CrN (1 1 1) epitaxial growth in a twin domain fashion. By changing the nitrogen versus argon gas flow mixture and the deposition temperature, thin films with different surface morphologies ranging from grainy rough textures to flat and smooth films were prepared. These parameters can also affect the CrN x system, with the film compound changing between semiconducting CrN and metallic Cr2N through the regulation of the nitrogen content of the gas flow and the deposition temperature at a constant deposition pressur…

ABSOLUTE THERMOELECTRIC POWER OF Pb–Sn ALLOYS

2011

International audience; In this work, absolute thermoelectric power (ATP) of Pb, Sn, Pb-20 wt.% Sn, Pb-40 wt.% Sn, Pb-60 wt.% Sn, Pb-80 wt.% Sn are measured. Measurements are performed in a temperature gradient furnace from 20 degrees C to 500 degrees C, for both solid and liquid states. Temperatures are measured with T-type copper-constantan thermocouples, while voltage signal between copper electrodes of those thermocouples is recorded in order to calculate ATP of the sample metal.

Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1−xSn ) thin films

2019

Abstract The (Ti, Zr, Hf)Co(Sb 1 − x Snx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb 1 − x Snx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole locali…

Photoelectron Emission from Metal Surfaces Induced by VUV-emission of Filament Driven Hydrogen Arc Discharge Plasma

2015

Photoelectron emission measurements have been performed using a filament-driven multi-cusp arc discharge volume production H^- ion source (LIISA). It has been found that photoelectron currents obtained with Al, Cu, Mo, Ta and stainless steel (SAE 304) are on the same order of magnitude. The photoelectron currents depend linearly on the discharge power. It is shown experimentally that photoelectron emission is significant only in the short wavelength range of hydrogen spectrum due to the energy dependence of the quantum efficiency. It is estimated from the measured data that the maximum photoelectron flux from plasma chamber walls is on the order of 1 A per kW of discharge power.

The interdependence of structural and electrical properties in TiO2/TiO/Ti periodic multilayers

2013

International audience; Multilayered structures with 14-50 nm periods composed of titanium and two different titanium oxides, TiO and TiO2, were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. The structure and composition of these periodic TiO2/TiO/Ti stacks were investigated by X-ray diffraction and transmission electronic microscopy techniques. Two crystalline phases, hexagonal close packed Ti and face centred cubic TiO, were identified in the metallic-rich sub-layers, whereas the oxygen-rich ones comprised a mixture of amorphous TiO2 and rutile phase. DC electrical resistivity rho measured for temperatures ranging from 300 to 500 K exhibited a meta…

Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials

2016

Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…

Temperature Dependent Suns-V<inf>oc</inf> of Multicrystalline Silicon Solar Cells from Different Ingot Positions

2018

This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence…

Band gap of corundumlike α−Ga2O3 determined by absorption and ellipsometry

2017

The electronic structure near the band gap of the corundumlike $\ensuremath{\alpha}$ phase of ${\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ has been investigated by means of optical absorption and spectroscopic ellipsometry measurements in the ultraviolet (UV) range (400--190 nm). The absorption coefficient in the UV region and the imaginary part of the dielectric function exhibit two prominent absorption thresholds with wide but well-defined structures at 5.6 and 6.3 eV which have been ascribed to allowed direct transitions from crystal-field split valence bands to the conduction band. Excitonic effects with large Gaussian broadening are taken into account through the Elliott-Toyozawa model, which y…