Search results for "electromagnetic radiation"
showing 10 items of 755 documents
Optical absorption induced by UV laser radiation in Ge-doped amorphous silica probed by in situ spectroscopy
2007
We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape depends on time. Electron spin resonance measurements performed ex situ a few hours after the end of exposure permit to complete the information acquired by optical absorption by detection of the paramagnetic Ge(1) and Ge-E' centers laser-induced in the samples.
UV-Photoinduced Defects In Ge-Doped Optical Fibers
2005
We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several radiation-induced point defects, among which the Ge(1) (GeO4 -) is found to be responsible of induced OA in the investigated spectral region.
<title>Multiphoton-absorption-induced structural changes in fused silica</title>
1991
The basic properties (light refractive index, density, mechanical strength, etc.) of fused silica are changed by the influence of high-intensity light from the glass transparency region capable of generating excitons by multiphoton absorption. The self-trapped exciton decay near the microcavity in the fused silica structure leads to the stable elementary intrinsic defect pair (nonbridging oxygen atom and three-fold-coordinated silicon atom) generation. At the large- enough light intensities near such a microcavity with a defect, the next exciton can be self- trapped. Then the next elementary defect can appear in the microcavity, and a chemical bond between it and the previously generated de…
Luminescence center excited state absorption in tungstates
2001
The excited state absorption of intrinsic luminescence center (self-trapped exciton) in tungstates (CaWO4, ZnWO4, PbWO4 and CdWO4) was studied. The transient absorption and luminescence spectra, decay kinetics and lifetime dependencies on temperature have been measured. The model of self-trapped exciton and nature of observed absorption bands were discussed.
Luminescence of a self-trapped exciton in GeO2 crystal
1993
Abstract The self-trapped exciton (STE) is discovered in the GeO2 crystal. A PL band at 2.5 eV with a strong Stokes shift is excited only in the fundamental absorption range of GeO2 crystal with the quantum yield about 0.4 and the decay time constant 800 ± 5 μs at 80 K. The PL thermal quenching occurs at 200 K with the energy about 0.25 eV and the frequency factor 107. At 4.5 K the PL decay kinetics splits into two components with time constants 270 μs and 8000 μs, which can be due to a triplet state split in the zero magnetic field. The STE in GeO2 is very similar to a STE in SiO2.
Raman investigation of single oxidized carbon nanotubes
2001
The oxidation process of single-walled carbon nanotubes via nitric acid treatment was followed by IR-, UV-Vis-NIR, and single bundle Raman spectroscopy. The introduction of functional, oxygen-containing groups is revealed by an additional absorption band at 1725 cm−1, characteristic of carbonyl stretch vibrations. No significant shift of the optical absorption bands could be detected after oxidation. The combination of atomic force microscopy and confocal scanning resonance-enhanced Raman microscopy was used to investigate thin bundles and, eventually, individual nanotubes in detail. These experiments enabled determination of the dependence of the Raman intensity of the G-line (around 1590 …
Interference-assisted resonant detection of axions
2018
Detection schemes for the quantum chromodynamics axions and other axion-like particles in light-shining-through-a-wall (LSW) experiments are based on the conversion of these particles into photons in a magnetic field. An alternative scheme may involve the detection via a resonant atomic or molecular transition induced by resonant axion absorption. The signal obtained in this process is second order in the axion-electron interaction constant but may become first order if we allow interference between the axion-induced transition amplitude and the transition amplitude induced by the electromagnetic radiation that produces the axions.
A Temperature-Dependent X-Ray Absorption Characterization of Test Filters for the ATHENA Mission X-IFU Instrument
2018
In order to work properly, the X-ray Integral Field Unit of the ATHENA mission requires a set of thermal filters that block the infrared radiation, preventing it to reach the detector. Each filter will be mounted and thermally anchored onto a shield of the multistage cryostat and will be kept at the specific temperature of the stage. On the other hand, the filters partially absorb X-rays, and their transmittance has to be carefully characterized. The effect of temperature on the absorption edges of the elements that make up the filters has not been investigated yet. Here, we report the results of a preliminary run on the optical transmission data around the edges of C, N, and O at different…
Temperature effects on the performances of the ATHENA X-IFU thermal filters
2016
The X-Ray Integral Field Unit (X-IFU) detector on-board ATHENA is an array of TES micro-calorimeters that will operate at ~50 mK. In the current investigated design, five thermal filters (TF) will be mounted on the cryostat shields to attenuate IR radiative load and avoid energy resolution degradation due to photon shot noise. Each filter consists of a thin polyimide film (~50 nm thick) coated with aluminum (~30 nm thick). Since the TF operate at different temperatures in the range 0.05-300 K, it is relevant to study how temperature affects their mechanical/optical performances (e.g. near edge absorption fine structures of the atomic elements in the filter material). Such results are crucia…
Radiation defects in undoped and Nd‐doped LaGaO 3 crystals
2005
Radiation induced defects have been studied in undoped and Nd-doped (6 mol% and 12 mol%) LaGaO3 crystals. Wide absorption band (2.2–2.8 eV) was observed after crystal irradiation with X-rays at 300 K. Induced defects have been annealed in air at ∼450 K. Similar absorption band was observed in transient absorption spectra after ns-pulsed electron beam excitation. The radiation defect creation efficiency is higher in undoped LaGaO3 crystal. It is shown that small concentration of Nd-doping increases the LaGaO3 crystal radiation hardness. In transient absorption spectra along with 2.7 eV band the absorption bands at 1.5 eV and 2.2 eV were observed. The decay process of transient absorption has…