Search results for "electronics"
showing 10 items of 4340 documents
Color Sensitive Response of Graphene/Graphene Quantum Dot Phototransistors
2019
We present the fabrication and characterization of all-carbon phototransistors made of graphene three terminal devices, coated with atomically precise graphene quantum dots (GQD). Chemically synthesized GQDs are the light absorbing materials, while the underlying chemical vapor deposition (CVD)-grown graphene layer acts as the charge transporting channel. We investigated three types of GQDs with different sizes and edge structures, having distinct and characteristic optical absorption in the UV–vis range. The photoresponsivity exceeds 106 A/W for vanishingly small incident power (<10–12 W), comparing well with state of the art sensitized graphene photodetectors. More importantly, the photor…
Structural characterization and electrochemical hydrogen storage properties of Ti2LxZrxNi (x [ 0, 0.1, 0.2) alloys prepared by mechanical alloying
2013
International audience; Nominal Ti2Ni was synthesized under argon atmosphere at room temperature using a planetary high-energy ball mill. The effect of milling time and Zr substitution for Ti on the microstructure was characterized by XRD, SEM and TEM, and the discharge capacities of Ti2xZrxNi (x 1/4 0, 0.1, 0.2) were examined by electrochemical measurements at galvanostatic conditions. XRD analysis shows that amorphous phase of Ti2Ni can be elaborated by 60 h of milling, whereas Zr substitution hinders amorphization process of the system. The products of ball milling nominal Ti2xZrxNi (x 1/4 0.1, 0.2) were austenitic (Ti, Zr)Ni and partly TiO, despite the fact that the operation was carrie…
Photoluminescence-Based Spatially Resolved Temperature Coefficient Maps of Silicon Wafers and Solar Cells
2020
In this article, we present a method to obtain implied open-circuit voltage images of silicon wafers and cells at different temperatures. The proposed method is then demonstrated by investigating the temperature coefficients of various regions across multicrystalline silicon wafers and cells from different heights of two bricks with different dislocation densities. Interestingly, both low and high temperature coefficients are found in dislocated regions on the wafers. A large spread of temperature coefficient is observed at regions with similar performance at 298 K. Reduced temperature sensitivity is found to be correlated with the increasing brick height and is exhibited by both wafers and…
A Novel Method for Characterizing Temperature Sensitivity of Silicon Wafers and Cells
2019
In this paper, we present a novel method to obtain temperature dependent lifetime and implied-open-circuit voltage (iV OC ) images of silicon wafers and solar cells. First, the method is validated by comparing the obtained values with global values acquired from lifetime measurements (for wafers) and current-voltage measurements (for cells). The method is then extended to acquire spatially resolved images of iV OC temperature coefficients of silicon wafers and cells. Potential applications of the proposed method are demonstrated by investigating the temperature coefficients of various regions across multi-crystalline silicon wafers and cells from different heights of two bricks with differe…
The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires
2015
We experimentally investigate the influence of AlN buffer growth on the nucleation and the polarity of a self-organized assembly of GaN nanowires (NWs) grown on Si. Two complementary growth mechanisms for AlN buffer deposited on Si are demonstrated. Both emphasize the aggregation of Si on the AlN surface and the growth of large cubic crystallites, namely, AlN pedestals. Further growths of GaN NWs assembly reveal that the GaN 2D layer found at the bottom of the NW assembly is the result of the coalescence of Ga-polar pyramids, whereas AlN pedestals are observed as preferential but not exclusive NW nucleation sites. NWs are N-polar or exhibit inversion domains with a Ga-polar core/N-polar she…
A General Mathematical Formulation for the Determination of Differential Leakage Factors in Electrical Machines with Symmetrical and Asymmetrical Ful…
2018
This paper presents a simple and general mathematical formulation for the determination of the differential leakage factor for both symmetrical and asymmetrical full and dead-coil windings of electrical machines. The method can be applied to all multiphase windings and considers Gorges polygons in conjunction with masses geometry in order to find an easy and affordable way to compute the differential leakage factor, avoiding the adoption of traditional methods that refer to the Ossanna's infinite series, which has to be obviously truncated under the bound of a predetermined accuracy. Moreover, the method described in this paper allows the easy determination of both the minimum and maximum v…
Determination of differential leakage factors in electrical machines with non-symmetrical full and dead-coil windings
2017
In this paper Gorges polygons are used in conjunction with masses geometry to find an easy and affordable way to compute the differential leakage factor of non symmetrical full and dead coil winding. By following the traditional way, the use of the Ossanna's infinite series which has to be obviously truncated under the bound of a predetermined accuracy is mandatory. In the presented method no infinite series is instead required. An example is then shown and discussed to demonstrate practically the effectiveness of the proposed method.
Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures
2020
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these applications. In this paper we report on X-ray amorphous a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive magnetron sputtering. The substrates were cooled by a nitrogen flow through the copper substrate holder during the deposition. The films were characterized by X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and ellipsometry. The a-ZnOx films on glass and Ti substrates were obtained at the substrate holder temp…
Optical properties of GaSe, characterization and simulation
2021
Abstract The study focuses on structural and optical characterizations and properties of the GaSe lamellar material in one hand and on a numerical simulation of the photovoltaic properties of the ITO/GaSe heterojunction in a second hand. A few layers of GaSe were exfoliated from bulk GaSe on PET substrate. The optical transmission was recorded at room temperature. It shows that GaSe exhibits both indirect and direct band gaps of about 1.92 and 2.2 eV respectively. A value, as high as 104 cm−1, of the absorption coefficient was obtained. The corresponding refractive index has been determined numerically according to the Sellmeier and Cauchy models. The interesting value of absorption shows o…
Determination of fine magnetic structure of magnetic multilayer with quasi antiferromagnetic layer by using polarized neutron reflectivity analysis
2020
We carried out polarized neutron reflectivity (PNR) analysis to determine the fine magnetic structure of magnetic multilayers with quasi-antiferromagnetic (quasi-AFM) layers realized by 90-deg coupling using two Co90Fe10 layers, and quantitatively evaluated the magnetization of quasi-AFM layers. Two types of samples with different buffer layers, Ru buffer and a NiFeCr buffer, were investigated and the average angles between the respective magnetization of the two Co90Fe10 layers were estimated to be +/− 39 degrees and +/− 53 degrees. In addition, less roughness was found in the NiFeCr buffer sample resulting stronger 90-deg coupling. A perfect quasi-AFM is expected to be realized by a flat …