Search results for "electronics"
showing 10 items of 4340 documents
Monomeric vs. polymeric bonded iminodiacetate silica supports in high-performance ligand-exchange chromatography
1983
The synthesis of monomeric and polymeric bonded iminodiacetate-groups on silica supports is described. The polymeric support offers advantages over the monomeric, such as (i) preparation is much simpler, (ii) higher surface concentration of functional groups can be achieved without loss of efficiency and (iii) hydrolytic stability. Cu2+ loaded supports were examined for their kinetic performance, in particular for the C-parameter of the Knox equation, and for their hydrolytic stability. Calculation of the surface coverage shows that only a rather thin polymeric layer is formed; this is in agreement with the results of the kinetic performance. The retention of α-amino acids on the Cu2+ loade…
Self-Assembled DNA-Based Structures for Nanoelectronics
2023
Recent developments in structural DNA nanotechnology have made com-plex and spatially exactly controlled self-assembled DNA nanoarchitectureswidely accessible. The available methods enable large variety of differ-ent possible shapes combined with the possibility of using DNA structuresas templates for high-resolution patterning of nano-objects, thus openingup various opportunities for diverse nanotechnological applications. TheseDNA motifs possess enormous possibilities to be exploited in realization ofmolecular scale sensors and electronic devices, and thus, could enable fur-ther miniaturization of electronics. However, there are arguably two mainissues on making use of DNA-based electroni…
Effect of Mn Doping on the Optical Properties of Chalcogenide Compounds ZnS and ZnTe
2020
In this paper, the influence of the addition of Mn on the optical properties of the binary compounds ZnS and ZnTe deposited by a close-spaced vacuum sublimation method onto nonoriented glass at different substrate temperatures was considered. The spectral dependences of the transmittance T (λ), reflectance R (λ) and the absorption α (λ), as well as the bandgap for each material (Eg) were measured and calculated.
Electronics and Electromagnetism
2007
Twisted hexaazatrianthrylene: synthesis, optoelectronic properties and near-infrared electroluminescent heterojunctions thereof
2015
The synthesis, optoelectronic properties and near-infrared electroluminescent heterojunctions of a twisted and soluble 7,8,15,16,23,24-hexaazatrianthrylene derivative are reported.
Indium Selenide Solar Cells
1981
Indium selenide photovoltaic devices are described. Transport and photovoltaic properties are discussed. Efficiencies of 6% are reported and ways of improvement are proposed.
Structure and mechanical properties of Al–B composite powder
1997
Abstract Al-B composite powder has been obtained by crushing pieces of composite material presenting industrial waste. Structural peculiarities and microhardness of separate powder particles (d∼1 mm) have been investigated. Original design of high precision microhardness tester made it possible to detect the properties of powder both in near-surface layer and below it. The powder represents a new structurally non-homogenous material with the increased microhardness (1.5 GPa) which grows up to 4 GPa in near-surface layers. Stable oxide compounds are formed on internal surfaces and defects of the aluminium alloy. Powder compacts were obtained. Adhesion on Al–B and Al–Al interfaces at various …
3.5-μm bandwidth mid-infrared supercontinuum generation in a 2-cm long suspended-core chalcogenide fiber
2014
A supercontinuum source extending from 0.6 to 4.1 µm has been successfully generated in a 2-cm long As2S3 chalcogenide suspended-core fiber by means of a nJ-level 200-fs pumping at 2.5 µm.
Optical Modification of Monolayer MoS 2 : Deterministic Modification of CVD Grown Monolayer MoS 2 with Optical Pulses (Adv. Mater. Interfaces 10/2021)
2021
ChemInform Abstract: Observation of New Oscillatory Phenomena During the Electrochemical Anodization of Silicon.
2010
This paper reports the observation of large undamped voltage oscillations during the anodic polarization of silicon in electrol yte containing a combination of acids. One of them stimulates oxide growth and the other its chemical dissolution (in the present c ase, (0.01-0.1 M H3PO4) + (0.001- 0.01 M HF). This temporal patterning of the anodization process is shown to be due to the formation of a thin (50-90 nm) oxide layer at the sample surface and its subsequent lifting-off. The mechanism of oxide detachment i s thought to be an isotropic growth of micropores at the oxide/silicon interface triggered on by changes of electrochemical condi tions there.