Search results for "growth"

Arbuscular mycorrhizal fungi positively affect growth of Ailanthus altissima (Mill.) Swingle seedlings and show a strong association with this invasi…

2015

Arbuscular mycorrhizal fungi (AMF) may promote plant invasion by enhancing plant performance and competitiveness. However, only a small number of studies have considered the interactions between local soil microbial communities and invasive plants, and even fewer have focused on alien trees. Ailanthus altissima is a serious problem in the Mediterranean Basin, where it has invaded many habitats. We investigated the symbiosis between A. altissima and indigenous AMF in two invaded, ecologically different Mediterranean woodlands. Mycorrhizal infection was high at both sites (> 60% of the root fragments were mycorrhizal), indicating that A. altissima roots may be infected by AMF under different …

Group graded algebras and almost polynomial growth

2011

Let F be a field of characteristic 0, G a finite abelian group and A a G-graded algebra. We prove that A generates a variety of G-graded algebras of almost polynomial growth if and only if A has the same graded identities as one of the following algebras: (1) FCp, the group algebra of a cyclic group of order p, where p is a prime number and p||G|; (2) UT2G(F), the algebra of 2×2 upper triangular matrices over F endowed with an elementary G-grading; (3) E, the infinite dimensional Grassmann algebra with trivial G-grading; (4) in case 2||G|, EZ2, the Grassmann algebra with canonical Z2-grading.

A note on cocharacter sequence of Jordan upper triangular matrix algebra

2016

Let UJn(F) be the Jordan algebra of n × n upper triangular matrices over a field F of characteristic zero. This paper is devoted to the study of polynomial identities satisfied by UJ2(F) and UJ3(F). In particular, the goal is twofold. On one hand, we complete the description of G-graded polynomial identities of UJ2(F), where G is a finite abelian group. On the other hand, we compute the Gelfand–Kirillov dimension of the relatively free algebra of UJ2(F) and we give a bound for the Gelfand–Kirillov dimension of the relatively free algebra of UJ3(F).

Varieties with at most cubic growth

2019

Abstract Let V be a variety of non necessarily associative algebras over a field of characteristic zero. The growth of V is determined by the asymptotic behavior of the sequence of codimensions c n ( V ) , n = 1 , 2 , … , and here we study varieties of polynomial growth. We classify all possible growth of varieties V of algebras satisfying the identity x ( y z ) ≡ 0 such that c n ( V ) C n α , with 1 ≤ α 3 , for some constant C. We prove that if 1 ≤ α 2 then c n ( V ) ≤ C 1 n , and if 2 ≤ α 3 , then c n ( V ) ≤ C 2 n 2 , for some constants C 1 , C 2 .

Volume growth and parabolicity

2001

Urban growth (1956-1998) in the metropolitan area of Alacant-Elx (Comunitat Valenciana)

2007

18 páginas, 5 figuras, 4 tablas. An abbreviated English version of the paper in the same journal is also attached (Boletín de la AGE 43: 369-374).

Activation of c-Jun N-terminal kinase 1 by UV irradiation is inhibited by wortmannin without affecting c-iun expression.

1999

Activation of c-Jun N-terminal kinases (JNKs)/stress-activated protein kinases is an early response of cells upon exposure to DNA-damaging agents. JNK-mediated phosphorylation of c-Jun is currently understood to stimulate the transactivating potency of AP-1 (e.g., c-Jun/c-Fos; c-Jun/ATF-2), thereby increasing the expression of AP-1 target genes. Here we show that stimulation of JNK1 activity is not a general early response of cells exposed to genotoxic agents. Treatment of NIH 3T3 cells with UV light (UV-C) as well as with methyl methanesulfonate (MMS) caused activation of JNK1 and an increase in c-Jun protein and AP-1 binding activity, whereas antineoplastic drugs such as mafosfamide, mito…

On the mechanism of the interaction between oxygen and close-packed single-crystal aluminum surfaces

2003

Abstract Using periodic first principles simulations we investigate the interaction of oxygen molecules with both regular Al(111) and Al(001) surfaces as well as a stepped Al(111) substrate. The limitation of this approach is the use of thin metallic slabs with a limited range for their coverage by adsorbed oxygen. The advantage is the detailed modeling that is possible at an atomic level. On the regular Al(111) surface, we have been able to follow the oxidation process from the approach of O 2 molecules to the surface, through the chemisorption and absorption of O atoms, up to the formation of first Al 2 O 3 formula units. An energetically feasible mechanism for the formation of these Al 2…

Irreversible Inhibition of Epidermal Growth Factor Receptor Activity by 3-Aminopropanamides

2012

Irreversible epidermal growth factor receptor (EGFR) inhibitors contain a reactive warhead which covalently interacts with a conserved cysteine residue in the kinase domain. The acrylamide fragment, a commonly employed warhead, effectively alkylates Cys797 of EGFR, but its reactivity can cause rapid metabolic deactivation or nonspecific reactions with off-targets. We describe here a new series of irreversible inhibitors containing a 3-aminopropanamide linked in position 6 to 4-anilinoquinazoline or 4-anilinoquinoline-3- carbonitrile driving portions. Some of these compounds proved to be as efficient as their acrylamide analogues in inhibiting EGFR-TK (TK = tyrosine kinase) autophosphorylati…

Processing of amorphous Si by pulsed laser irradiation at different wavelengths

2012

Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2 nd and 3 rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm 2 for the 2 nd harmonics and 155 mJ/cm 2 for the 3 rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.