Search results for "impur"
showing 10 items of 349 documents
Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
2017
Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma source configurations. The CCP-PEALD was operated using both remote and direct plasma. It was observed that the films deposited by means of remote ICP and CCP were all highly oxygen rich, independently on plasma operation parameters, but impurity (H, C) contents could be reduced by increasing plasma pulse time and applied power. With the direct CCP-PEALD the film composition was closer to stoichiometric, and film crystallinity was enhanced. The ZnO film growth was observe…
Improving the material quality of silicon ingots by aluminum gettering during crystal growth
2016
We present a method for the purification of silicon ingots during the crystallization process that reduces significantly the width of the low charge carrier lifetime region at the ingot top. The back-diffusion of impurities from the ingot top is suppressed by adding a small amount of pure aluminum into the silicon melt right at the end of the solidification. We study the aluminum gettering effect by instrumental neutron activation analysis (INAA) and Fei imaging. Furthermore, we present a model for aluminum gettering of Fe in the silicon ingot that is in agreement with literature data for aluminum gettering at lower temperature. The distribution of iron in the ingots with and without alumin…
On the Theory of Domain Structure of Disordered Ferroelectrics
2009
We present a comprehensive analysis of domain structure formation in ferroelectric phase of incipient ferroelectrics with off-center dipole impurities like KTaO 3 :Li, Nb,Na. Our analysis is carried out on the base of effective free energy of disordered ferroelectrics, derived by us earlier. This free energy permits to apply the standard approach to domain structure calculation. Using coupled system of Maxwell equations with those obtained by minimization of above free energy, we calculate the physical characteristics of domain structure as functions of impurity dipoles concentration n. Our theory can be easily generalized for arbitrary temperature and crystal shape including thin films.
Electronic Properties of Point Defects in Metals
1982
Recent progress in electronic structure and related properties of point defects in metals is reviewed. Topics discussed include transition metal impurities in a non-magnetic host, construction of potential energy surfaces from effective-medium theories, trapping of light interstitials, and pair potential in metals.
Physical chemistry of the powder metallurgy of beryllium: Chemical characterization of the powder in relation to its granularity
1996
Combining the systematic quantitative chemical analysis of the light impurities H, C, N, and O, the quantitative thermal desorption of molecular H2O and H2, and X ray diffractometry of various size fractions of a commercial Be powder (SP-65 grade from Brush-Wellman) allowed the precise de-termination of the mean composition and equivalent mean thickness of the surface impurity phases in the passivation-contamination layer on the surface of the particles. The overall surface stoichi-ometry is as follows: 0.2 BeOcrystallized, 0.8 [BeO - 0.59 H2O]amorphous, 0.14 H2Oads The result of the elemental analysis by X-ray photoelectron spectroscopy of the unetched surface of a powder pellet is compare…
The effect of alkaline treatment on mechanical properties of kenaf fibers and their epoxy composites
2015
Abstract In this work, kenaf fibers were pre-treated in a NaOH solution (6% in weight) at room temperature for two different periods (48 and 144 h). The chemical treatment of kenaf fibers for 48 h allowed to clean their surface removing each impurity whereas 144 h of immersion time had detrimental effect on the fibers surface and, consequently, on their mechanical properties. Untreated and NaOH treated kenaf fibers (i.e. for 48 h) were also used as reinforcing agent of epoxy resin composites. The effect of the stacking sequence (i.e. using unidirectional long fibers or randomly oriented short fibers) and the chemical treatment on the static mechanical properties was evaluated showing that t…
Luminescence of ferroelectric crystals: LiNbO3and KNbO3
2000
Abstract The thermostimulated luminescence and time-resolved luminescence of LiNbO3 (congruent, stoichiometric, Eu−, Mn−, or Cr−doped) and KNbO3 crystals (undoped, Fe−, or Mn− doped) excited by X-ray, pulsed nitrogen laser or pulsed electron beam were studied. The luminescence decay times of niobium-oxygen groups (regular or perturbed by defect or impurity) were obtained. It is shown that the energy transfer from bulk to the activator in LiNbO3 is not effective during the electron-hole recombination process.
A microscopic model for long-term laser damage in calcium fluoride
2009
Single crystal calcium fluoride (CaF 2 ) is an important lens material in deep-ultraviolet optics, where it is exposed to high radiation densities. The known rapid damage process in CaF 2 upon ArF laser irradiation cannot account for irreversible damage after long irradiation times. We use density functional methods to calculate the properties of laser-induced point defects and to investigate defect stabilization mechanisms on a microscopic level. The mobility of the point defects plays a major role in the defect stabilization mechanisms. Besides stabilization by impurities, we find that the agglomeration of F-centers plays a significant role in long-term laser damage of CaF 2 . We present …
Numerical study of surface waves generated by low frequency EM field for silicon refinement
2018
One of the most perspective methods to produce solar grade silicon is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus due to high segregation coefficients. One possible approach to remove boron is use of reactive gas on surface of silicon melt. An approach of creating surface waves on silicon melt's surface is proposed in order to enlarge its area and accelerate removal of boron via chemical reactions. This paper focuses on numerical analysis of surface wave creation by means of low frequency magnetic field. Frequency of magnetic field and its amplitude significantly change the character of surface waves with most changes occu…
Understanding the2pcore-level spectra of manganese: Photoelectron spectroscopy experiments and Anderson impurity model calculations
2007
Using high-resolution core-level photoelectron spectroscopy and modified Anderson impurity model calculations, we study the $\mathrm{Mn}\phantom{\rule{0.2em}{0ex}}2p$ spectrum of manganese metal and resolve the current debate about its spectral shape. An unusual satellite feature, $1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ from the main peak, is observed in the $\mathrm{Mn}\phantom{\rule{0.2em}{0ex}}2{p}_{3∕2}$ spectrum of a thick Mn layer grown on Al. It originates from intra-atomic multiplet effect related to Mn atoms with large local moment. The satellite decreases in intensity for thin Mn layers and for Al deposition on bulklike Mn because of enhanced $\mathrm{Mn}\phantom{\rule{0.2em}{0e…