Search results for "interface"
showing 10 items of 2139 documents
Competition between submonolayer ordering and multilayer adsorption: Studies of simple lattice gas models
1986
Abstract We model condensation of adatoms at a substrate surface by a semi-infinite simple cubic lattice gas system. While in the bulk there is just a nearest-neighbour attractive interaction, in the first layer adjacent to the surface we allow for a periodic potential due to the substrate with a period of two lattice spacings, or for a next-nearest-neighbour repulsive interaction mediated by the substrate. Hence order-disorder phenomena may occur in the first layer, while only gas-liquid condensation transitions can occur in layers further away from the substrate surface. The ground-state phase diagrams of this model are obtained exactly, while the behaviour at nonzero temperatures is obta…
Incommensurate phases in adsorbed monolayers: structure and energy of domain walls
2002
Abstract The properties of incommensurate films of domain-wall structure formed on the (1 0 0) plane of face centered cubic crystals are studied by Monte Carlo simulation. The wall energies, wall structure and the wall–wall interaction are determined for different types of domain walls occurring in films which form the c(2×2) registered structure. The systems characterized by different strength and corrugation of the surface potential and of different misfit between adsorbate and adsorbent are discussed. It is demonstrated that heavy as well as light walls are rather strongly localized. Moreover, it is shown that the incommensurate structure with crossing heavy walls has higher stability th…
First principles simulations of 2D Cu superlattices on the MgO(0 0 1) surface
2004
AbstractFirst principles slab simulations of copper 2D superlattices of different densities on the perfect MgO(001) surface are performed using the DFT method as implemented into the CRYSTAL98 computer code. In order to clarify the nature of interfacial bonding, we consider regular 1/4, 1/2 and 1 monolayer (ML) coverages and compare results of our calculations with various experimental and theoretical data. Our general conclusion is that the physical adhesion associated with a Cu polarization and charge redistribution gives the predominant contribution to the bonding of the regular Cu 2D layer on the MgO(001) surface.
Calculations of the atomic and electronic structure for SrTiO3 perovskite thin films
2001
The results of calculations of SrTiO3 (100) surface relaxation and rumpling with two different terminations (SrO and TiO2) are presented and discussed. We have used the ab initio Hartree–Fock (HF) method with electron correlation corrections and the density functional theory (DFT) with different exchange–correlation functionals, including hybrid exchange techniques. All methods agree well on surface energies and on atomic displacements, as well as on the considerable increase of covalency effects near the surface. More detailed experiments on surface rumpling and relaxation are necessary for further testing of theoretical predictions.
Thickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility
2006
An exact solution is provided for the current density-voltage (J –V) characteristics of space-charge limited transport of a single carrier in organic layers with field-dependent mobility of the type μ (E) = μ0 exp (γ √E. The general scaling relationship for field-dependent mobility occurs in terms of the variables JL and V /L. For the density-dependence of the mobility found in organic field-effect transistor measurements, the thickness scaling occurs in terms of different variables, J1/βL and V /L. The proposed scaling is a useful test for distinguishing field- and carrier density-dependent mobility in disordered organic semiconductors. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Domain wall splitting and creation of the fine domain structure
1998
Abstract The study of the movement of the paraelectric-ferroelectric interphase boundary in (Ba,Sr)TiO 3 with concentration change is provided in the framework of the mean-field theory. The analytical solution for the parameters of motion of the interphase boundary is applied to the calculations of the splitting of domain walls in (Ba,Sr)TiO 3 for different concentrations of Sr. The calculations are based on the experimental data for the Curie–Weiss constant and for the parameters of the Landau–Ginzburg expression for the free energy.
Monte Carlo Study of Dense Monolayer and Bilayer Films on the (100) Plane of Face-Centered Cubic Crystals
1999
A Monte Carlo simulation method in the canonical and in the grand canonical ensembles is used to study the behavior and properties of dense monolayer and bilayer films formed on the (100) plane of model face-centered cubic crystals. Systems with different effects due to the periodicity of the gas−solid potential are considered, and the mechanism of melting in the first and the second adsorbed layer is discussed. It is demonstrated that the film structure is very sensitive to the gas−solid potential corrugation, as well as to the temperature and the surface coverage. In particular, it is shown that monolayer films formed on weakly corrugated surfaces exhibit the incommensurate (dense) phase …
Lattice gas models for multilayer adsorption: variation of phase diagrams with the strength of the substrate potential
1990
Abstract The simple cubic lattice gas model with nearest-neighbor attractive interaction is considered for the case where the potential V ( z ), that an adatom at a distance z from the surface experiences due to the substrate, is V ( z ) = − A / z 3 . Exact ground state phase diagrams are obtained for different A , while the behavior at nonzero temperatures is studied both by Monte Carlo simulations and the molecular field approximation. We show that the detailed sequence of the layering transitions in the first few layers depends very strongly on the strength of the substrate potential: for strong potentials individual first-order layering transitions in layers 1, 2, 3, …, while for interm…
Semiconducting half-Heusler and LiGaGe structure type compounds
2009
Compounds with LiAlSi (half-Heusler) and LiGaGe structure types have been investigated by means of band structure calculations. The LiAlSi structure type is known as the half-Heusler structure type, whereas LiGaGe is a closely related hexagonal variant. A remarkable feature of some XYZ half-Heusler compounds with 8 and 18 valence electrons is, that despite being composed of only metallic elements, they are semiconductors. More than 100 semiconducting compounds within these structure types are known. LiGaGe compounds have an additional degree of freedom, namely the degree of puckering of the layers. These compounds can become semiconducting at a certain degree of puckering. Half-metallic beh…
Comparative study of [001] surface relaxations of perovskite titanates
1998
Surface relaxations of the cubic perovskite SrTiO and BaTiO crystals have been studied in the framework of the shell model. The 33 positions of atoms in several surface layers embedded into the electrostatic field of the remainder of the crystal were calculated. Ti 4q , Sr 2q ,B a 2q and O 2y ions in six near-surface layers are displaced differently from their crystalline sites. Such effects create the so-called surface rumpling, a dipole moment and the electric field in the near-surface region. Calculated atomic displacements were compared with the LEED experimental data and showed good agreement. Our simulations have demonstrated that the cubic perovskite SrTiO crystals 3 reveal surface p…