Search results for "luminescence."
showing 10 items of 1568 documents
Surface processing of TlBr single crystals used for radiation detectors
2009
Abstract The processing method for obtaining the high-quality surfaces of TlBr single crystals, providing removal of a mechanically destroyed surface layer by chemical etching, is developed. The crystals grown from the melt of purified materials by the Bridgman–Stockbarger method were used for the experiments. The Vickers microhardness as a structure-sensitive technique was used in a study of the crystal quality and properties of the plastically deformed surface layer created by cutting. It was shown that even under highly accurate conditions of cutting, the depth of the work-hardened surface layer with a high density of dislocations, vacancies and other structural defects exceeds 20 μm. Th…
Luminescent detectors of ionising radiation
2003
Abstract At present in slow neutron imaging an active layer of an imaging plate IP contains a mixture of storage phosphors, usually BaFBr:Eu 2+ used for imaging of X-rays, and a neutron converter material, usually Gd 2 O 3 , LiF. A novel Li-containing luminescent material perspective for a direct neutron conversion and storage is discussed. Irradiation of LiBaF 3 crystals results in generation of Frenkel defect pairs and creation of F-type centres responsible for three absorption bands in UV-and visible spectral region. Because photo-stimulation in each of these absorption bands leads to bleaching of induced absorption, the F-type colour centres are convenient for storage of radiation dose.…
Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire
2008
4 páginas, 5 figuras.-- PACS numbers: 78.67.Lt, 71.30.+h, 71.35. -y.-- Comunicación presentada a la International Conference on the Physics of Semiconductors (ICPS) celebrada en Rio de Jqaneiro (Brasil/2008).
Investigation of nitrogen-related acceptor centers in indium selenide by means of photoluminescence: Determination of the hole effective mass
1997
In this work we report on steady-state and time-resolved photoluminescence (PL) measurements in nitrogen-doped p-type indium selenide in the 33--210-K temperature range. In samples with low nitrogen concentration the photoluminescence spectrum consists of exciton-related peaks and a band-to-acceptor recombination peak (2.1-\ensuremath{\mu}s lifetime) with LO-phonon replica. An ionization energy of 65.5 meV is proposed for the nitrogen-related acceptor. A long-lived (18 \ensuremath{\mu}s) component, which consists of an asymmetric broadband centered around the acceptor peak, has been also detected by means of time-resolved PL. Samples with a higher nitrogen concentration show a PL spectrum t…
Renormalization of the Fröhlich constant for electrons in a quantum dot
2002
Recent experimental investigations of far-infrared attenuation in GaAs/InAs quantum dot in magnetic field and measurements of photoluminescence features for smaller pyramid-shape GaAs/InAs quantum dots indicated an enhancement of coupling of longitudinal optical phonons with confined electrons, which manifested itself in a significant increase of the effective Frohlich constant in comparison to its bulk value. We give a simple quasiclassical explanation of this enhancement and relate the renormalization of the Frohlich constant with the dot diameter.
Carrier localization effect in polarized InGaN multiple quantum wells
2005
Carrier localization effects in polarized InGaN/GaN multiple quantum wells (MQWs) were investigated as a function of well width, d, and In content, x. Using photoreflectance (PR), photoluminescence (PL), PL excitation (PLE), selective excitation of PL, PL excitation power, and time-resolved PL spectroscopy, the dominance of the localization effect against the built-in field effect on carrier recombination dynamics in InxGa1–xN MQWs of different well width (d = 2.0–4.0 nm, x ≈ 0.15) and In content (x ≈ 0.22–0.27, d = 2.5 nm) was revealed. Based on the modeling of the PL spectra by Monte Carlo simulation of exciton hopping and the spectroscopic reference provided by PR, increased In content a…
Resonant Rayleigh scattering in quantum well structures
1996
Abstract We report continuous wave experiments on resonant Rayleigh scattering (RRS) performed on high quality GaAs AlGaAs quantum well structures. The simultaneous measurement of the resonant Rayleigh scattering and of the photoluminescence excitation (PLE) allows us to resolve very small differences between the two spectra. We show that, even in very good samples, there is a small but detectable Stokes shift of the RRS profile with respect to the PLE. It is also found that the RRS profile has a smaller linewidth and is sensitive to bound exciton transitions which are not detectable in the PLE. We compare our data with previous findings and discuss possible origins of the Stokes shift.
Exciton kinetics and luminescence in disordered InxGa 1-xP/GaAs quantum wells
2003
Trabajo presentado en el 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 2003, celebrado en Karlsruhe (Alemania), del 23 al 28 de febrero de 2003
Investigation of the influence of light illumination on the characteristics of CdZnTe detectors
2011
The spectral response of optical transmittance, spectrometry characteristics, output signal shapes and leakage currents of CdZnTe detectors with plane parallel electrodes under illumination with light within wavelength region of 400 – 1100 nm are presented.
Photoluminescence at the ground-state level anticrossing of the nitrogen-vacancy center in diamond: A comprehensive study
2021
Physical review / B 103(3), 035307 (2021). doi:10.1103/PhysRevB.103.035307