Search results for "luminescence."
showing 10 items of 1568 documents
Temperature and excitation energy dependence of decay processes of luminescence in Ge-doped silica
2003
We report experimental results on the time decay of photoluminescence at 4.2 eV in Ge-doped silica. This optical emission is assigned to a singlet-singlet transition between electronic states localized on an oxygen deficiency nearby a Ge atom and its radiative decay rate is in competition with an intersystem crossing mechanism that populates an excited triplet state. We investigate the dependence of the lifetime of this photoluminescence on the temperature, in the 6--295 K range, and on the excitation energy, in the ultraviolet and vacuum ultraviolet region. The mean value of the decay time decreases on increasing the temperature, in agreement with the phonon-assisted nature of the intersys…
Luminescence and vacuum ultraviolet excitation spectroscopy of samarium doped SrB4O7
2020
Abstract Sm2+ and Sm3+ co-doped SrB4O7 could be utilized in several high-level optical devices and fundamental knowledge about the optical behavior of these materials benefits the development of luminescent applications. Herein, we report luminescence and its vacuum ultraviolet (VUV) excitation spectra in samarium doped SrB4O7. Both, Sm2+ and Sm3+ luminescence centers have been examined and distinguished in the emission and the excitation spectra investigated under synchrotron radiation. The contribution of either Sm2+ or Sm3+ emission lines into the emission spectra heavily depended on the excitation energy, and strong f-f transitions of both Sm2+ and Sm3+ were detected. At 10 K, a broad i…
UV light energy storage and thermoluminescence in AlN ceramics
2007
AlN ceramics, untreated and subjected to oxygen ion implantation, are studied for potential application in TL dosimetry of UV light. Based on photoluminescence and thermoluminescence measurements there are shown advantages of the selection of the 480 emission band for TL signal recording instead of the previously used 400 nm band: higher intensity of the TL signal, lower fading rate of the accumulated TL signal, excitation region (270-340 nm) corresponding to UV-B range, monitoring of which is actual in UV dosimetry. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Photoluminescence study of radiative transitions in ZnTe bulk crystals
1998
Abstract This paper focuses on photoluminescence (PL) and selective photoluminescence (SPL) of ZnTe bulk crystals grown by the cold traveling heater method. The crystals exhibit a PL response with a much more intense excitonic zone than the one due to free-to-bound and donor–acceptor bands, denoting a good sample quality. In particular, we have investigated the Y 1 and Y 2 peaks which, in epitaxial layers, have usually been associated with structural defects. On bulk samples they have not been detected so far because of different masked mechanisms. SPL measurements show that the electrons are the most likely involved carriers for this emission. Additionally, the analysis of the PL variation…
Photoluminescence at 1.9 eV in synthetic wet silica
2001
We report the effects of γ-irradiation on the optical activity of wet synthetic silica samples. As a function of γ-dose, the growth of a composite structure in the 4–6 eV spectral region of the absorption spectrum is observed. This structure can be resolved into two main contributions centered at 5.8 and 4.8 eV, respectively. The first component is usually attributed to an optical transition of the E′ centers. The second one is able to excite an emission band centered at 1.9 eV. The analysis of the growth kinetics, in the γ-dose range 20–1000 Mrad, of both emission at 1.9 eV and absorption at 4.8 eV shows that these two bands change in a similar way, reaching constant amplitudes, after an i…
Solvatochromism Unravels the Emission Mechanism of Carbon Nanodots
2016
High quantum yield, photoluminescence tunability, and sensitivity to the environment are hallmarks that make carbon nanodots interesting for fundamental research and applications. Yet, the underlying electronic transitions behind their bright photoluminescence are strongly debated. Despite carbon-dot interactions with their environment should provide valuable insight into the emitting transitions, they have hardly been studied. Here, we investigate these interactions in a wide range of solvents to elucidate the nature of the electronic transitions. We find remarkable and systematic dependence of the emission energy and kinetics on the characteristics of the solvent, with strong response of …
Creation of paramagnetic defects by gamma irradiation in amorphous silica
2000
An electron spin resonance (ESR) study of the defects induced by γ-rays in various types of natural and synthetic silica is reported. Three main structures were identified: the E′ center and two doublets with field splitting of 7.4 and 11.8 mT, respectively, both centered around the E′ center signal. Another structure partially overlapping the E′ center line was also detected, consisting in three peaks with a maximum field splitting of 1.36 mT. We have investigated the growth kinetics of these centers on increasing the y-ray accumulated dose. In all investigated materials the growth of E′ centers can be interpreted as caused by γ-activated conversion of one or more precursors. The 1.36 mT s…
Single Semiconductor Nanocrystals under Compressive Stress: Reversible Tuning of the Emission Energy
2017
The photoluminescence of individual CdSe/CdS/ZnS core/shell nanocrystals has been investigated under external forces. After mutual alignment of a correlative atomic force and confocal microscope, individual particles were colocalized and exposed to a series of force cycles by using the tip of the AFM cantilever as a nanoscale piston. Thus, force-dependent changes of photophysical properties could be tracked on a single particle level. Remarkably, individual nanocrystals either shifted to higher or to lower emission energies with no indications of multiple emission lines under applied force. The direction and magnitude of these reversible spectral shifts depend on the orientation of nanocrys…
Temperature dependent photoluminescence of photocatalytically active titania nanopowders
2007
Abstract Temperature photoluminescence (PL) in the sub-ambient range has been developed as a tool for characterizing photocatalytic materials. The use of well-characterized TiO2 nanoparticles with calibrated particle sizes allowed to face the temperature dependent PL results with the photocatalytic activity and several important physico-chemical parameters. In the relaxation of the photoexcited electron/hole pairs, the transfer towards surface sites is in competition with radiative and non-radiative recombinations. Temperature dependent PL appears thus to be a very sensitive technique to study the efficiency of the electron or the hole trapping at the surface of titania nanoparticles where …
Luminescence of γ-radiation-induced defects in α-quartz
2004
Optical transitions associated with γ-radiation-induced defects in crystalline α-quartz were investigated by photoluminescence excited by both pulsed synchrotron radiation and steady-state light. After a 10 MGy γ-dose we observed two emissions at 4.9 eV (ultraviolet band) and 2.7 eV (blue band) excitable in the range of the induced absorption band at 7.6 eV. These two luminescence bands show a different temperature dependence: the ultraviolet band becomes bright below 80 K; the blue band increases below 180 K, but drops down below 80 K. Both emissions decay in a timescale of a few ns under pulsed excitation, however the blue band could also be observed in slow recombination processes and it…