Search results for "luminescence."
showing 10 items of 1568 documents
Different regimes of electronic coupling and their influence on exciton recombination in vertically stacked InAs/InP quantum wires
2006
8 páginas, 8 figuras.
WS2/MoS2 Heterostructures via Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3S4 Molecular Clusters
2020
The preparation of 2D stacked layers that combine flakes of different nature, gives rise to countless number of heterostructures where new band alignments, defined at the interfaces, control the electronic properties of the system. Among the large family of 2D/2D heterostructures, the one formed by the combination of the most common semiconducting transition metal dichalcogenides WS2/MoS2, has awaken great interest due to its photovoltaic and photoelectrochemical properties. Solution as well as dry physical methods have been developed to optimize the synthesis of these heterostructures. Here a suspension of negatively charged MoS2 flakes is mixed with a methanolic solution of a cationic W3S…
Comparison of the sensitivity to spectral variation of voltage- and current-matched tandem devices with luminescent coupling and thickness optimizati…
2016
Using models that do not take luminescent coupling into account, voltage-matched tandem devices have previously been shown to be less sensitive to spectral variation than their current-matched counterparts. The present paper compares the spectral sensitivity of voltage-matched and current-matched tandem devices by applying a detailed balance model that takes luminescent coupling into account. Current-matched stacks where the thickness of the top cell thickness has been optimized are also considered. The main finding is that luminescent coupling reduces the difference in spectral sensitivity between voltage-matched and current-matched devices. There is still a significant difference, however…
WS 2 /MoS 2 Heterostructures through Thermal Treatment of MoS 2 Layers Electrostatically Functionalized with W 3 S 4 Molecular Clusters
2020
The preparation of 2D stacked layers combining flakes of different nature gives rise to countless numbers of heterostructures where new band alignments, defined at the interfaces, control the electronic properties of the system. Among the large family of 2D/2D heterostructures, the one formed by the combination of the most common semiconducting transition metal dichalcogenides, WS2 /MoS2 , has awakened great interest owing to its photovoltaic and photoelectrochemical properties. Solution as well as dry physical methods have been developed to optimize the synthesis of these heterostructures. Here, a suspension of negatively charged MoS2 flakes is mixed with a methanolic solution of a cationi…
Purcell-enhancement of the radiative PL decay in perylenediimides by coupling with silver nanoparticles into waveguide modes
2017
In this work, an interesting approach to enhance the coupling between excitons and plasmons is proposed by integrating highly luminescent perylenediimides (PDIs) and Ag metal nanoparticles (MNPs) in the core of a multilayer dielectric waveguide. The combination of the weak plasmonic coupling and the high scattering of MNPs gives rise to a significant improvement of the PDI photoluminescence and Purcell factor (PF) in forward-scattering geometry. Furthermore, when the PDI-MNP system is used as the core of a multilayer waveguide, a Purcell factor enhancement larger than 10 is observed, which is explained by an increase in the exciton-plasmon coupling under the light confinement in the wavegui…
X‐irradiation induced photo‐ and thermostimulated luminescence of CsCdF 3 :Mn crystals
2005
Photo- and thermostimulated luminescence (PSL and TSL respectively) of previously X-irradiated CsCdF3 crystal doped with Mn were investigated. After X-irradiation of CsCdF3 crystal at 8 K PSL bands at about 300 nm and 550 nm appear. Several stimulation bands can be revealed for luminescence at 300 nm and 550 nm. The stimulation band at 340 nm is related to an F-type centre absorption band in accordance with the Mollwo-Ivey relation for halide crystals. Subsequent heating of the crystal after X-irradiation at 8 K shows TSL peaks in the temperature regions 8 K – 90 K and 200 K – 300 K. The spectral composition of the TSL involves both bands at 300 nm and 550 nm. Experiments performed allow us…
Radiation defects in undoped and Nd‐doped LaGaO 3 crystals
2005
Radiation induced defects have been studied in undoped and Nd-doped (6 mol% and 12 mol%) LaGaO3 crystals. Wide absorption band (2.2–2.8 eV) was observed after crystal irradiation with X-rays at 300 K. Induced defects have been annealed in air at ∼450 K. Similar absorption band was observed in transient absorption spectra after ns-pulsed electron beam excitation. The radiation defect creation efficiency is higher in undoped LaGaO3 crystal. It is shown that small concentration of Nd-doping increases the LaGaO3 crystal radiation hardness. In transient absorption spectra along with 2.7 eV band the absorption bands at 1.5 eV and 2.2 eV were observed. The decay process of transient absorption has…
<title>Photostimulated recombination processes in x-irradiated CsCdF<formula><inf><roman>3</roman></inf></form…
2005
Fluoride crystals with the perovskite structure doped with rare-earth ions and other activators are interesting materials for laser hosts, scintillators, and detectors of ionizing radiation. Therefore, an actual task is to clarify the structure of the radiation-induced defects and recombination processes in these crystals. Compared to other fluoroperovskites, considerably less information is available concerning to the radiation-induced processes in the CsCdF3 crystals. We present a study of photostimulated luminescence (PSL) in the previously x-irradiated CsCdF3 crystal doped with Mn (0.05%). After the x-irradiation of the crystal, optical stimulation at 320 nm leads to the appearance of 3…
<title>Electronic excitations and defects in fluoroperovskite LiBaF<formula><inf><roman>3</roman></inf></formu…
2003
A survey of the present situation with respect to knowledge of lattice defects, electronic excitations, such as excitons and localized excitons, as well as energy storage and transfer phenomena in LiBaF3 crystals is given. Both phenomenological models and experimental interpretations of optical absorption bands, tentatively associated with F-type (electron) centers created by X-ray or electron irradiation, is reviewed. Interpretation of three radiative processes (super-fast core-valence transitions, slow trapped exciton luminescence and luminescence of structure defects) observed in undoped LiBaF3 crystals is analyzed with respect to practical application. Attention is paid to the behavior …
Photoluminescence excited by ArF and KrF lasers and optical absorption of stishovite mono-crystal
2008
Two photoluminescence bands were found in a stishovite (silicon dioxide) mono-crystal sample under ArF (193 nm) and KrF (248 nm) excitation. The blue band is situated at 3.17 ± 0.02 eV in the case of ArF and at 3 ± 0.2 in the case of KrF. The UV band is at 4.55 ± 0.05 eV in the case of ArF and at 4.5 ± 0.05 eV in the case of KrF. The position of the UV emission band correlates with that excited by x rays. This position is 4.6 ± 0.05 eV with FWHM 0.8 ± 0.05 eV (Truhins et al 2003 Solid State Commun. 127 415). The blue band possesses slow decay kinetics with time constant 16 ± 2 µs and the UV band is fast on the level of 2 ± 0.5 ns, similarly for both lasers. Thermal quenching of both bands b…