Search results for "ohutkalvo"
showing 10 items of 65 documents
A study of solar thermal absorber stack based on CrAlSiNx/CrAlSiNxOy structure by ion beams
2019
Renewable energies are foreseen as a major energy resource for next generations. Among several energy sources and technologies available, Concentrated Solar Power (CSP) technology has a great potential, but it needs to be optimised, in particular to reduce the costs, with an increase of the operating temperature and long term stability. This goal can be achieved by tailoring the composition and multilayer structure of films. In this work we present and discuss the results obtained from solar absorber coatings based on nitride/oxynitride structures. A four-layer film structure, W/CrAlSiNx(HA)/CrAlSiNxOy(LA)/SiAlOx, was deposited on stainless steel substrates using magnetron sputtering deposi…
Limits of lateral expansion in two-dimensional materials with line defects
2021
The flexibility of two-dimensional (2D) materials enables static and dynamic ripples that are known to cause lateral contraction, shrinking of the material boundary. However, the limits of 2D materials' \emph{lateral expansion} are unknown. Therefore, here we discuss the limits of intrinsic lateral expansion of 2D materials that are modified by compressive line defects. Using thin sheet elasticity theory and sequential multiscale modeling, we find that the lateral expansion is inevitably limited by the onset of rippling. The maximum lateral expansion $\chi_{max}\approx 2.1\cdot t^2\sigma_d$, governed by the elastic thickness $t$ and the defect density $\sigma_d$, remains typically well belo…
Hiukkasherätteinen röntgen-emissio ohutkalvojen analysoinnissa
2013
Tässä tutkielmassa tavoitteena oli analysoida ohutkalvoja hiukkasherätteisellä röntgen-emissiolla (PIXE) käyttäen apuna takaisinsirontaa. Erityisesti tavoitteena oli selvittää pystytäänkö PIXEllä saamaan lisätietoa tilanteissa, joissa pelkän takaisinsironnan avulla ei saada tarkkaa tietoa. Tähän tarkoitukseen tutkittiin kahta eri tapausta: lähekkäisten alkuaineiden suhteen määritys ja pienten epäpuhtauksien määritys. Lähekkäisten alkuaineiden analysoinnissa käytettiin GeCu-näytettä. Täs- sä tapauksessa 1,5 MeV:n takaisinsirontaspektristä ei pystytty erottamaan germaniumin ja kuparin piikkejä, mutta se pystyttiin tekemään 3,0 MeV:n energialla. PIXE-mittauksissa germaniumin ja kuparin piikit …
Studies on atomic layer deposition of IRMOF-8 thin films
2015
Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-…
Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition
2021
Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water. In addition to depositions with normal water, heavy water (2H2O) was used in order to study the reaction mechanisms and the hydrogen incorporation at different deposition temperatures from 30 to 200 °C. The total hydrogen concentration in the films was found to increase as the deposition temperature decreased. When the deposition temperature decreased close to room temperature, the main source of impurity in hydrogen changed from 1H to 2H. A sufficiently long purging time changed the main hydrogen isotope incorporated in the film back to 1H. A multiple short pulse scheme was used to study th…
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
2022
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…
Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils
2018
In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO 2 using AP-LTO® 330 and ozone (O 3 ) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO 2 film deposition rate was dependent on the temperature varying within 1.5–2.2 Å cycle −1 in the temperature range of 80–350°C, respectively. The low-temperature SiO 2 process that resulted was combined with the conventional trimethyl aluminium + H 2 O process in order to prepare thin mul…
Ca-P-O thin film preparation, modification and characterisation
2011
Bioceramics are biocompatible ceramic materials, that interact with biological systems of the body to treat, strengthen or replace body functions. Most conventional bioceramics are oxide ceramics, glass ceramics and calcium phosphate ceramics. Among these calcium phosphates, synthetic hydroxyapatite has been extensively studied due to its biomimetic properties similar to that of natural bone. One approach to prepare synthetic hydroxyapatite is to first deposit amorphous Ca-P-O thin film and then by means of post deposition annealing initiate the formation of hydroxyapatite crystals to the film. In addition to the correct film composition and crystalline structure, other surface properties s…
Instrumentation for time-of-flight elastic recoil detection analysis
2016
Time-of-flight elastic recoil detection is an ion beam based method to analyze the elemental composition of thin film samples at different depths. In order to improve the mass resolution and to enable kinematic correction a position sensitive gas ionization chamber energy detector was constructed. This detector along with pre-existing timing detectors were connected to a modern fully digitizing data acquisition setup. This thesis describes the design of these instruments, including all aspects from the mechanical design of the gas ionization detector to the algorithm and software development of the digitizing acquisition setup. The performance of the system has been studied with measurements …
Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
2018
A comparative study of mechanical properties and elemental and structural composition was made for aluminum nitride thin films deposited with reactive magnetron sputtering and plasma enhanced atomic layer deposition (PEALD). The sputtered films were deposited on Si (100), Mo (110), and Al (111) oriented substrates to study the effect of substrate texture on film properties. For the PEALD trimethylaluminum–ammonia films, the effects of process parameters, such as temperature, bias voltage, and plasma gas (ammonia versus N2/H2), on the AlN properties were studied. All the AlN films had a nominal thickness of 100 nm. Time-of-flight elastic recoil detection analysis showed the sputtered films t…