Search results for "optoelectronics"

Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry

2006

The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…

Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

2012

Four pulsed-laser single-event effects systems, differing in wavelength and pulse width, were used to generate single event transients in a large-area silicon photodiode and an operational amplifier (LM124) to determine how transient amplitude and charge collection varied among the different systems. The optical wavelength and the focused spot size are the primary factors influencing the resultant charge density profile. In the large-area photodiode the transients can be distorted by high charge-injection densities that occur for tightly focused, higher energy optical pulses. When the incident laser-pulse energies are corrected for reflection losses and photon efficiency, with collection de…

Radiation resistance of nanolayered silicon nitride capacitors

2020

Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…

Luminescence dynamics of hybrid ZnO nanowire/CdSe quantum dot structures

2016

Colloidal CdSe quantum dots (QDs) functionalized with different organic linker molecules are attached to ZnO nanowires (NWs) to investigate the electron transfer dynamics between dots and wires. After linking the quantum dots to the nanowires, the photo-induced electron transfer (PET) from the QDs into the NWs becomes visible in the PL transients by a decrease of dot luminescence decay time. The different recombination paths inside the QDs and the PET process are discussed in the framework of a rate equation model. Photoconductivity studies confirm the electron transfer by demonstrating a strong enhancement of the wire photocurrent under light irradiation into the dot transition. (© 2016 WI…

Photoluminescence in Er-doped 0.4Na1/2Bi1/2TiO3-(0.6-x)SrTiO3-xPbTiO3 solid solutions

2020

Photoluminescence and optical second harmonic generation in Er-doped 0.4Na0.5Bi0.5TiO3-(0.6-x)SrTiO3-xPbTiO3 solid solutions is studied. Earlier, it was shown that upon increasing of PbTiO3 concent...

2021

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We …

Radiation hardness studies of CdTe and for the SIXS particle detector on-board the BepiColombo spacecraft

2009

Abstract We report of the radiation hardness measurements that were performed in the developing work of a particle detector on-board ESA's forthcoming BepiColombo spacecraft. Two different high- Z semiconductor compounds, cadmium telluride (CdTe) and mercuric iodide (HgI 2 ), were irradiated with 22 MeV protons in four steps to attain the estimated total dose of 10 12 p / cm 2 for the mission time. The performance of the detectors was studied before and after every irradiation with radioactive 55 Fe source Mn K α 5.9 keV emission line. We studied the impact of the proton beam exposure on detector leakage current, energy resolution and charge collection efficiency (CCE). Also the reconstruct…

Framework for complex quantum state generation and coherent control based on on-chip frequency combs

2018

Integrated frequency combs introduce a scalable framework for the generation and manipulation of complex quantum states (including multi-photon and high-dimensional states), using only standard silicon chip and fiber telecommunications components.

Defect-induced blue luminescence of hexagonal boron nitride

2016

Abstract Native defect-induced photoluminescence around 400 nm (blue luminescence - BL) was studied in hBN materials with different size and various origins. The following spectral characterizations were used: spectra of luminescence and its excitation, luminescence dependence on temperature, luminescence kinetics, optically stimulated luminescence and infrared absorption. It was found, that the BL is characteristic for all these materials, which were studied. The BL forms a wide, asymmetric and phonon-assisted emission band at 380 nm. This luminescence can be excited either through the exciton processes, or with light from two defect-induced excitation bands at 340 nm and 265 nm. It was fo…

A graphene-based neutral particle detector

2019

A neutral particle detector is presented, in which the traditionally used target material, indium tin oxide (ITO), is replaced by graphene. The graphene-based detector enables collinear photodetachment measurements at a significantly shorter wavelength of light down to 230 nm compared to ITO-based detectors, which are limited at 335 nm. Moreover, the background signal from the photoelectric effect is drastically reduced when using graphene. The graphene based detector, reaching 1.7 eV further into the UV energy range, allows increased possibilities for photodetachment studies of negatively charged atoms, molecules, and clusters.A neutral particle detector is presented, in which the traditio…