Search results for "point defect"
showing 10 items of 65 documents
Generation and excitation of point defects in silica by synchrotron radiation above the absorption edge
2010
We report photoluminescence measurements carried out on amorphous SiO{sub 2} upon excitation by synchrotron light. Exposure of the as-grown material to above-edge light at low temperature induces the formation of nonbridging oxygen hole centers (NBOHC), localized in a thin layer below the surface limited by the penetration depth (tens of nm) of impinging light. After concluding the exposure to 11 eV light, stable defects are revealed by observing their characteristic 1.9 eV photoemission band excited at 4. 8eV. The local concentration of induced defects, supposedly formed by nonradiative decay of excitons, is very high (close to approx10{sup 21} cm{sup -3}) and independent of the previous h…
Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal
2021
Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for stand…
Luminescence of silicon Dioxide — silica glass, α-quartz and stishovite
2011
Abstract This paper compares the luminescence of different modifications of silicon dioxide — silica glass, α-quartz crystal and dense octahedron structured stishovite crystal. Under x-ray irradiation of pure silica glass and pure α-quartz crystal, only the luminescence of self-trapped exciton (STE) is detected, excitable only in the range of intrinsic absorption. No STE luminescence was detected in stishovite since, even though its luminescence is excitable below the optical gap, it could not be ascribed to a self-trapped exciton. Under ArF laser excitation of pure α-quartz crystal, luminescence of a self-trapped exciton was detected under two-photon excitation. In silica glass and stishov…
Comparison Between Point Defect Generation by $\gamma$-rays in Bulk and Fibre Samples of High Purity Amorphous ${\hbox {SiO}}_{2}$
2008
We compare the E', H(I) and Si-ODC(II) contents in a low-OH high-purity a-SiO2 either in bulk or fibre forms. We found that the H(I) centre appears during irradiation and tend to increase with the dose if the fibre contains hydrogen excess. This behaviour is believed to be one the possible reason to explain the apparent radiation-sensitivity enhancement in the blue-UV spectrum when the fibre is hydrogenated and irradiated at high dose. However for the hydrogen-treated fibres, no experimental repeatability could be evidenced in the measurements of E' and Si-ODC(II) although an acceptable agreement was still found in normal samples. This suggests a possible complex reactional mechanisms in pr…
Steady-State X-Ray Radiation-Induced Attenuation in Canonical Optical Fibers
2020
The so-called canonical optical fibers (OFs) are samples especially designed to highlight the impact of some manufacturing process parameters on the radiation responses. Thanks to the results obtained on these samples, it is thus possible to define new procedures to better control the behaviors of OFs in radiation environments. In this article, we characterized the responses, under steady-state X-rays, of canonical samples representative of the most common fiber types differing by their core-dopants: pure silica, Ge, Al, and P. Their radiation-induced attenuation (RIA) spectra were measured online at both room temperature (RT) and liquid nitrogen temperature (LNT), in the energy range [~0.6…
Radiation effects on silica-based preforms and optical fibers-I: Experimental study with canonical samples
2008
International audience; Prototype samples of preforms and associated fibers have been designed and fabricated through MCVD process to investigate the role of fluorine (F) and germanium (Ge) doping elements on the radiation sensitivity of silica-based glasses. We characterized the behaviors of these canonical samples before, during and after 10 keV X-ray irradiation through several spectroscopic techniques, to obtain global information (in situ absorption measurements, electron paramagnetic resonance) or spatially-resolved information (confocal microscopy, absorption and luminescence on preform). These tests showed that, for the Ge-doped fiber and in the 300–900 nm range, the radiation-induc…
Transient and Steady-State Radiation Response of Phosphosilicate Optical Fibers: Influence of H2 Loading
2019
The radiation response of a phosphorus-doped multimode optical fiber is investigated under both transient (pulsed X-rays) and steady-state ( $\gamma $ - and X-rays) irradiations. The influence of a H2 preloading on the fiber radiation-induced attenuation (RIA) in the 300–2000-nm wavelength range has been characterized. To better understand the impact of this treatment, online behaviors of fiber samples containing different amounts of gas are compared from glass saturation (100%) to less than 1%. In addition to these in situ experiments, additional postirradiation spectroscopic techniques have been performed such as electron paramagnetic resonance or luminescence measurements to identify the…
Evidence of different red emissions in irradiated germanosilicate materials
2016
International audience; This experimental investigation is focused on a radiation induced red emission in Ge doped silica materials, elaborated with different methods and processes. The differently irradiated samples as well as the pristine ones were analyzed with various spectroscopic techniques, such as confocal microscopy luminescence (CML), time resolved luminescence (TRL), photoluminescence excitation (PLE) and electron paramagnetic resonance (EPR). Our data prove that irradiation induces a red luminescence related to the presence of the Ge atoms. Such emission features a photoexcitation spectrum in the UV-blue spectral range and, TRL measurements show that its decrease differs from a …
Pulsed X‐Ray Radiation Responses of Solarization‐Resistant Optical Fibers
2018
International audience; The transient radiation‐induced attenuation (RIA) of two different versions of pure‐silica‐core (PSC) multimode optical fibers (so‐called “solarization‐resistant” fibers) exposed to nanosecond 1 MeV X‐ray pulses are investigated. On‐line RIA spectra measurements at both room temperature (RT) and liquid nitrogen temperatures (LNT) in the range 1–3.5 eV are performed. Following the RIA kinetics, the properties of the metastable defects that are bleached just after the pulse are discussed. The spectral decomposition of the RIA is performed using known Gaussian bands associated to point defects absorbing in this spectral range. For both fiber types, the generation and th…
Coupled irradiation-temperature effects on induced point defects in germanosilicate optical fibers
2017
International audience; We investigated the combined effects of temperature and X-rays exposures on the nature of point defects generated in Ge-doped multimode optical fibers. Electron paramagnetic resonance (EPR) results on samples X-ray irradiated at 5 kGy(SiO2), employing different temperatures and dose rates, are reported and discussed. The data highlight the generation of the Ge(1), Ge(2), E0 Ge and E0 Si defects. For the Ge(1) and Ge(2), we observed a decrease in the induced defect concentrations for irradiation temperatures higher than *450 K, whereas the E0 defects feature an opposite tendency. The comparison with previous post-irradiation thermal treatments reveals peculiar effects…