Search results for "pulsed laser deposition"
showing 10 items of 76 documents
Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate
2013
We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at…
Optical properties of thin films of ZnO prepared by pulsed laser deposition
2004
In this paper we report on the structural features and optical properties of wurtzite ZnO films epitaxially grown on sapphire, fluorite and mica substrates by means of pulsed laser deposition (PLD). Post-deposition annealing results in a clear improvement of the film quality, reflected by the small width of the exciton-related lines in both the absorption and the photoluminescence spectra. Photoluminescence spectra revealed a multi-line structure which is identified in term of free excitons and excitons complexes with neutral donors and deep centers. The relative intensity of the PL lines mainly depends on the nature of the substrate used. Concerning optoelectronic applications it is especi…
Photocatalysis of rhodamine B and methyl orange degradation under solar light on ZnO and Cu2O thin films
2020
We report the photocatalytic properties of ZnO and Cu2O thin films deposited on glass substrates at room temperature by DC sputtering and pulsed laser deposition. The photoactivity of the films was investigated through the degradation of rhodamine B (RhB) and methyl orange (MO) under solar light. In order to select the most suitable film of ZnO for the of RhB and MO degradation, the relationship between the characteristics (e.g. energy levels and defects concentration) of ZnO films and their effectiveness in the photocatalytic yield of RhB and MO been studied, where several films were deposited by using different oxygen partial pressures (PO2: 0.05–1.3 mbar), while Cu2O films were grown und…
2008
ZnO doped with a few per cent (<10%) of magnetic ions such as Co exhibit room temperature (RT) ferromagnetism, transforming it into a very promising candidate for future spin electronic applications. We present x-ray magnetic circular dichroism (XMCD) spectroscopy, which has been used in total electron yield, total fluorescence yield, and reflection mode to investigate the origin of ferromagnetism in such diluted magnetic semiconductor materials in a surface, bulk and interface sensitive way, respectively. We investigated three different types of samples: ZnO doped with 5% Co, artificially layered films, and layered films with additional co-doping of 10% Li. These films are prepared by puls…
Rogue waves among noiselike-pulse laser emission: An experimental investigation
2014
We investigate experimental conditions in a fiber ring laser where noiselike-pulse emission fulfills the rogue wave criteria, highlighting the influence of the chromatic dispersion sign as well as the pivotal role of the pulse measurement design. While pulse-energy rogue waves are exclusively detected in the anomalous dispersion regime, spectral rogue waves are recorded for both positive and negative dispersions. To reveal $\mathsf{L}\text{-shaped}$ statistical series compatible with the generation of spectral rogue wave events, the dispersive Fourier-transform method is implemented to study the shot-to-shot spectral fluctuations of the laser output.
Pulsed laser deposition of ZnO and VO2 films for memristor fabrication
2015
Memristors are resistive switching memory devices which have attracted much attention over the last years for high-density memory applications because of their simple structure, small cell size, high speed, low power consumption, potential for 3-D stacking and excellent compatibility with the complementary metal-oxide-semiconductor (CMOS) technology [1]. Beside nonvolatile memory applications, memristors have been also proposed for other different applications including biosensors [2] and neuromorphic [3] circuits. The device structure is simply an oxide material sandwiched between two metal electrodes. The switching behavior is not only dependent on the oxide material but also on the choic…
Density of States characterization of TiO2 films deposited by Pulsed Laser Deposition for Heterojunction solar cells
2021
The application of titanium dioxide (TiO2) in the photovoltaic field is gaining traction as this material can be deployed in doping-free heterojunction solar cells with the role of electron selective contact. For modeling-based optimization of such contact, knowledge of the titanium oxide defect density of states is crucial. In this paper, we report a method to extract the defect density through nondestructive optical measures, including the contribution given by small polaron optical transitions. The presence of both related to oxygen-vacancy defects and polarons is supported by the results of optical characterizations and the evaluation of previous observations resulting in a defect band …
<title>Irradiation effects in lead zirconate thin films</title>
2003
Lead zirconate PbZrO3 (PZ) and PbZr0.53Ti0.47O3 (PZT) sol-gel films with a thickness of up to 1.5 μm were deposited on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating technique and heterostructures of the same composition as well as on Pb0.92La0.08 (Zr0.65Ti0.35)O3 (PLZT-8) (with a thickness of 0.4 μm) were pulse laser deposited (PLD) on Pt/Ti/SiO2/Si. Observation of a typical antiferroelectric (AFE) double hysteresis loop in obtained PZ heterostructures at room temperature was attributed to the superior dielectric strength in case of thin film materials. The thermal behavior of dielectric permittivity e of PZ film reveals a maximum near 225°C on heating and 219°C on cooling. The higher res…
Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves
2020
The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The …
Preparation and characterization of (Hg0.7Mo0.3)Sr2(Ca0.7Y0.3)Cu2Ox and (Hg0.9Re0.1)Ba2CaCu2Oy superconducting films by laser ablation
2000
Abstract Oriented (Hg 0.7 Mo 0.3 )Sr 2 (Ca 0.7 Y 0.3 )Cu 2 O x and (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O y superconducting films were prepared on SrTiO 3 substrates using laser ablation and post-Hg-vapor annealing. Due to the stability of Mo 0.3 Sr 2 (Ca 0.7 Y 0.3 )Cu 2 O x and Re 0.1 Ba 2 CaCu 2 O y in air, no special handling was needed during the grinding, mixing and pressing of the precursor targets. The superconductivity of the films was characterized with the temperature dependence of the ac susceptibility ( χ - T ) and the resistance ( R - T ) while the crystallography was probed with x-ray diffraction (XRD) and scanning electron microscopy (SEM).