Search results for "purity"
showing 10 items of 356 documents
Determination of molecular stopping cross section of 12C, 16O, 28Si, 35Cl, 58Ni, 79Br, and 127I in silicon nitride
2015
Abstract Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si3N4, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the io…
Reactivity of commercial silicon and silicides towards copper(I) chloride. Effect of aluminium, calcium and iron on the formation of copper silicide
1998
Abstract The reaction of CuCl with silicon, containing Al, Fe and Ca as impurities, or with silicides (Si2Ca, Si2Fe, Si2Al2Ca, Si8Al6Fe4Ca) has been investigated in the temperature range 200–300°C. For the reaction between CuCl and commercial Si, it was found that, at 282°C, aluminium promotes the reaction between Cu3Si and CuCl while the rate of consumption of Cu3Si is greatly reduced by the presence of iron. The combined action of these two impurities leads to the formation of more copper–silicon alloy. In the presence of mixed silicides, the reaction with CuCl also leads to the formation of Cu3Si. For the quaternary Al–Ca silicide containing iron the rate of formation of Cu3Si is not inc…
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.
Optical switching of quantum states inside self-assembled quantum dots
2008
Abstract Photoluminescence and excitation of photoluminescence spectroscopy have been performed for two kinds of single InAs self-assembled quantum dots grown on GaAs. The presence of unintentional impurities (donors and acceptors) offers the possibility to switch from negative to positively charged excitons by selectively exciting impurity related optical transitions.
First-order and tricritical wetting transitions in the two-dimensional Ising model caused by interfacial pinning at a defect line
2014
We present a study of the critical behavior of the Blume-Capel model with three spin states (S=±1,0) confined between parallel walls separated by a distance L where competitive surface magnetic fields act. By properly choosing the crystal field (D), which regulates the density of nonmagnetic species (S=0), such that those impurities are excluded from the bulk (where D=) except in the middle of the sample [where DM(L/2)≠], we are able to control the presence of a defect line in the middle of the sample and study its influence on the interface between domains of different spin orientations. So essentially we study an Ising model with a defect line but, unlike previous work where defect lines …
Magnetic properties of vanadium(IV)-based extended systems: [(VO)3(μ-PO4)2(2,2′-bpy)(μ-OH2)]*1/3H2O and (VO)2H4P2O9
2013
International audience; The magnetic properties of [(VO)3(μ-PO4)2(2,2′-bpy)(μ-OH2)]1/3H2O (1) and (VO)2H4P2O9 (2), a tubular and a layered vanadium(IV) phosphates containing triply oxido bridged VIV dimers, are analyzed considering the Bleaney-Bowers S = 1/2 dimer model. In compound 1 the presence of an additional VIV connected with the VIV dimers through μ1,2-PO43− bridges is described with a Curie-Weiss type correction. This model reproduces the magnetic properties of compound 1 with g = 1.956, Jdim = −102.1 cm−1, θ = −0.4 cm−1 and Nα = 278 × 10−6 emu mol−1. In compound 2, the presence of a small percentage of paramagnetic impurity has to be considered to account for the divergence of χm …
Effect of film thickness on the transport properties of MgB2 synthesized by spray pyrolysis
2011
Abstract Polycrystalline MgB2 films of different thickness have been prepared by employing spray pyrolysis technique on MgO (1 0 0) substrate. The MgB2 and other phases have been confirmed using X-ray diffraction technique and no trace of impurities phases have been found. The resistivity behavior shows that the superconducting transition temperature lies in the range of 37–39 K with narrow transition width. The transport critical current density vary with films thickness and achieved highest value ∼1.2 × 106 A/cm2 at 20 K for 2.0 μm thick film and its values increase as thickness increases.
Preparation of thin films of the heavy fermion superconductor UNi2Al3
2004
Abstract Thin films of the heavy fermion superconductor UNi 2 Al 3 were prepared by coevaporation of the elementary components in an MBE-system. We obtained textured (1 0 0)-oriented films of this hexagonal compound depositing on Al 2 O 3 substrates. Epitaxial growth was observed on (1 1 2)-oriented orthorhombical YAlO 3 substrates. However, due to pronounced strain the UNi 2 Al 3 (1 0 0)-axis is shortened by ≈2%. No superconductivity of the films was observed which can be associated with the high impurity concentration deduced from R ( T ) and XRD investigations.
Superconductivity suppression in Fe-implanted thin Al films
2005
At present, ion implantation into metallic systems is given increasing attention, aiming at achieving properties and functionalities of technologically valuable materials not easily available via conventional techniques. In our experiments thin Al films were implanted with Fe ions in order to find out how the superconductive properties of the metal can be modified at will. The purpose was twofold, viz., first, to study the basic physics of superconductivity in low-dimensional metallic structures doped with impurities. The second purpose was to apply ion implantation for the suppression of undesired superconductivity in aluminum widely used for fabrication of micro- and nanodevices operated …
Change of the vortex core structure in two-band superconductors at the impurity-scattering-driven s±/s++ crossover
2017
We report a nontrivial transition in the core structure of vortices in two-band superconductors as a function of interband impurity scattering. We demonstrate that, in addition to singular zeros of the order parameter, the vortices there can acquire a circular nodal line around the singular point in one of the superconducting components. It results in the formation of the peculiar ``moat''-like profile in one of the superconducting gaps. The moat-core vortices occur generically in the vicinity of the impurity-induced crossover between ${s}_{\ifmmode\pm\else\textpm\fi{}}$ and ${s}_{++}$ states.