Search results for "semiconductor"
showing 10 items of 974 documents
EXAFS and XANES analysis of oxides at the nanoscale
2014
This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence.
Dielectrophoretic alignment and electrical characterization of CuO nanowire-based systems
2021
Abstract Dielectrophoresis is used to assemble nanowires between metallic electrodes to form scalable functional interconnects. The dielectrophoresis parameters are investigated for semiconductor copper oxide (CuO) nanowires that are desirable for energy conversion and storage, gas sensors and nanoelectromechanical systems. Experimental yields of multiple- and single-nanowire interconnects are explored at dielectrophoresis frequencies from 500 Hz to 500 kHz. The electrical properties of nanowire-electrode physical contact interfaces formed by dielectrophoresis, metal deposition, and dry mechanical transfer are investigated. The electrical transport mechanism in these interconnects is determ…
Nanowires for NEMS Switches
2020
Nanoelectromechanical systems (NEMS) are a promising novel technology for operation in extreme conditions (e.g. high temperature and radiation levels), where complementary semiconductor technology devices might fail due to electronic instability. An example for a NEMS device is a nanowire-based switch, which employs mechanical deflection of a nanowire to open and close an electrical circuit. To date, assembly and operation of individual nanowire based NEMS switches have been successfully demonstrated at laboratory level, but their further technological development remains a challenge. This chapter gives an insight into the current advances in applications of nanowires for NEMS switches. Syn…
Phonons in single-layer and few-layer MoS2 and WS2
2011
We report ab initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman-active modes A1g and E12g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et al., ACS Nano 4, 2695 (2010)], we find that the A1g mode increases in frequency with an increasing number of layers while the E12g mode decreases. We explain this decrease by an enhancement of the dielectric screening of the long-range Coulomb interaction between the effective charges with a growing number of layers. This decrease in the long-range part overcompensates for the increase of …
Excited states engineering enables efficient near-infrared lasing in nanographenes
2021
The spectral overlap between stimulated emission (SE) and absorption from dark states (i.e. charges and triplets) especially in the near-infrared (NIR), represents one of the most effective gain loss channel in organic semiconductors. Recently, bottom-up synthesis of atomically precise graphene nanostructures, or nanographenes (NGs), has opened a new route for the development of environmentally and chemically stable materials with optical gain properties. However, also in this case, the interplay between gain and absorption losses has hindered the attainment of efficient lasing action in the NIR. Here, we demonstrate that the introduction of two fluoranthene imide groups to the NG core lead…
An electrochemical route towards the fabrication of nanostructured semiconductor solar cells
2010
This work presents our preliminary results regarding an electrochemical process which allows the growth of nanostructured materials by means of nanopore templates. Also we analyze possible applications of this process to fabricate nanostructured semiconductors, such as CIGS, suitable for photovoltaic devices, and we consider the implications from the perspective of characterization techniques and device modelling when using such a technology.
Growth of low-density vertical quantum dot molecules with control in energy emission
2010
This article is distributed under the terms of the Creative Commons Attribution Noncommercial License.-- This article is part of the series 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
Engineering nanoarchitectures for high performance solar cells
2020
Abstract Inorganic semiconductor nanomaterials are exploited for the solar energy conversion for the past few decades and astonishing efficiency records are achieved through various device architectures. Interesting morphologies such as nanospheres, nanorods, nanoplates, nanowires, nanotubes, and hierarchy nanostructures are delivering promising results and contributing high efficiency in various kinds of modern generation solar cells. These architectures are obtained by different synthesis approaches in which all the dimensions of the materials could perfectly be tuned through optimized physical parameters. Contributions of these architectures to long term-stability, good carrier transport…
Mapping of local conductivity variations on fragile nanopillar arrays by scanning conductive torsion mode microscopy.
2010
A gentle method that combines torsion mode topography imaging with conductive scanning force microscopy is presented. By applying an electrical bias voltage between tip and sample surface, changes in the local sample conductivity can be mapped. The topography and local conductivity variations on fragile free-standing nanopillar arrays were investigated. These samples were fabricated by an anodized aluminum oxide template process using a thermally cross-linked triphenylamine-derivate semicondcutor. The nanoscale characterization method is shown to be nondestructive. Individual nanopillars were clearly resolved in topography and current images that were recorded simultaneously. Local current−…
ZnO Thin films doped with Erbium: Elaboration, Characterization and nonlinear optical properties measurements
2011
In this paper, we investigate NLO properties of ZnO nanostructures for optoelectronics applications. It is shown that carefully designed and fabricated nanostructured ZnO films posses some advantageous for practical use and to generate more and short wavelengths and, when combined with TiO , produce a core–shell structure that 2 reduces the combination rate. The limitations of ZnO-based DSCs are also discussed and several possible methods are suggested in order to expand the basic knowledge of ZnO to TiO , motivating further improvement 2 in the power-conversion efficiency of third harmonic generation THG.