Search results for "silicon photomultiplier"

Next generation of the Albira small animal PET based on high density SiPM arrays

2015

A new design of the small animal PET Albira system which detectors are based on arrays of SiPMs and monolithic LYSO scintillator is presented here. The system is made out of 3 rings of 8 detectors each, resulting on an axial and transaxial FOVs of 148 and 80 mm, respectively. The scanner is thermally stabilized using air-cooling. Working temperatures around 22–25°C are reached with individual detector variations around 0.2°C minimizing dark count rates and gain drifts. One of the most significant improvements of the current system is the accurate photon impact determination within the crystal volume, specially its depth of interaction. This allows the calculation of the true line of respons…

Position sensitive photosensors based on SiPM arrays

2014

High-resolution multichannel Time-to-Digital Converter core implemented in FPGA for ToF measurements in SiPM-PET

2013

In this contribution, Coincidence Resolving Time (CRT) results with the developed multichannel FPGA-TDC are showed as a function of different configurations for both, the sensor bias voltage and the digitizer threshold. The dependence of the CRT with the sensor matrix temperature, the amount of SiPM active area and the crystal type are also analyzed. Preliminary measurements carried out with a crystal array of 2 mm pixel size and 10 mm height have shown time resolutions for the entire 144 SiPM two-detectors ensemble as good as 800 ps.

Preliminary radiation hardness tests of single photon Si detectors

2010

Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…

Modeling and Characterization of SiPM Parameters at Temperatures between 95 K and 300 K

2017

The modeling and characterization of silicon photomultipliers (SiPMs) in a wide temperature range from 95 K to 300 K is presented. The devices under study had the distinctive feature of forward-biased p-n junctions situated under each pixel as active quenching resistors making them particularly appropriate to be operated at cryogenic temperatures. The voltage drop across the diode in a forward direction was measured for a series of injected currents in this temperature range. It was observed that the characteristics of different SiPM types influence the temperature dependence of the reverse saturation current. The devices were further characterized by low-level light-pulse measurements. The…

On the operation of silicon photomultipliers at temperatures of 1–4 kelvin

2016

Abstract SiPM operation at cryogenic temperatures fails for many common devices. A particular type from Zecotek with deep channels in the silicon substrate instead of quenching resistors was tested at liquid helium temperature. Two similar types were thoroughly characterized from room temperature down to liquid nitrogen temperature by illuminating them with low light levels. At cryogenic temperatures the SiPMs show an unchanged rise-time and a fast recovery time, practically no after-pulses, and exhibit no increased cross-talk probability. Charge collection spectra were measured to extract the pixel gain and its variation, both comparable to room temperature at the same over-voltage. The qu…

Gamma-ray position reconstruction in large lanthanum-halide crystals with SiPM readout: analytical vs. neural-network algorithms

2019

The main objective of this research was to achieve an excellent gamma-ray position reconstruction with very large monolithic scintillation crystals coupled to pixelated silicon photosensors. Analyzing the scintillation-light distribution measured along the SiPM-pixels one can get a sub-pixel accuracy for the position reconstruction. The quality of the latter depends on both the characteristics of the crystal-photosensor assembly, and the goodness of the algorithm used to reconstruct the gamma-ray hit location. We have carried out a systematic study for 511 keV gamma-rays using three different crystal thicknesses of 10 mm, 20 mm and 30 mm, all of them with planar geometry and a base size of …

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave

2012

N-on-P and P-on-N Silicon Photomultipliers: Responsivity comparison in the continuous wave regime

2013

We report on the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type and Ntype substrate respectively. A physical explanation of the experimental results is provided.

Measurements of Silicon Photomultipliers Responsivity

2012

We present some results on the optical characterization of Silicon Photomultipliers designed for medical imaging applications. In particular we will discuss our responsivity measurements performed with very low incident optical power and on a broad spectrum