Search results for "spin relaxation"
showing 10 items of 39 documents
Cooperative phenomena and light-induced bistability in iron(II) spin-crossover compounds
1999
In iron(II) spin-crossover compounds, the transition from the 1A1 low-spin state at low temperatures to the 5T2 high-spin state at elevated temperatures is accompanied by a large increase in metal-ligand bond lengths. The resulting elastic interactions may be pictured as an internal pressure which is proportional to the concentration of the low-spin species. Because pressure stabilises the low-spin state relative to the high-spin state this results in a positive feedback. Thermal transition curves in neat iron(II) spin-crossover compounds are thus invariable much steeper than in diluted mixed crystals, and the high-spin→low-spin relaxation following the light-induced population of the high-…
Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors
2013
Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electro…
Quantitative modeling of spin relaxation in quantum dots
2011
Physics Department, Harvard University, 02138 Cambridge MA, USA(Dated: December 16, 2011)We use numerically exact diagonalization to calculate the spin-orbit and phonon-induced triplet-singlet relaxation rate in a two-electron quantum dot exposed to a tilted magnetic field. Our schemeincludes a three-dimensional description of the quantum dot, the Rashba and the linear and cubicDresselhaus spin-orbit coupling, the ellipticity of the quantum dot, and the full angular descriptionof the magnetic field. We are able to find reasonable agreement with the experimental results ofMeunier et al. [Phys. Rev. Lett. 98, 126601 (2007)] in terms of the singlet-triplet energy splittingand the spin relaxation …
Monte Carlo Simulation of Electron Dynamics in Doped Semiconductors Driven by Electric Fields: Harmonic Generation, Hot-Carrier Noise and Spin Relaxa…
2011
In solid state electronics the miniaturization of integrated circuits implies that, even at moderate applied voltages, the components can be exposed to very intense electric fields. Advances in electronics push the devices to operate also under cyclostationary conditions, i.e. under large-signal and time-periodic conditions. A main consequence of this fact is that circuits exhibit a strongly nonlinear behavior. Furthermore, semiconductor based devices are always imbedded into a noisy environment that could strongly affect their performance, setting the lower limit for signal detection in electronic circuits. For this reason, to fully understand the complex scenario of the nonlinear phenomen…
Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise
2013
The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field is investigated. Two different sources of fluctuations are considered: (i) a symmetric dichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show, in both cases, an enhancement of the spin relaxation time by increasing the amplitude of the external noise. Moreover, we find that the electron spin lifetime versus the noise correlation time: (i) increases up to a plateau in the case of dichotomous random fluctuations, and (ii) shows a nonmonotonic behaviour with a maximum in the case of bulks subjected to a Gaussian correlated noise.
Information processing in nuclear magnetic resonance imaging.
1988
An extended image analysis and classification system is presented to discuss the principal composition of the components as well as the methods of its realization in the field of reference based NMR diagnostics and tissue characterization.
Determination of local defect density in diamond by double electron-electron resonance
2021
Magnetic impurities in diamond influence the relaxation properties and thus limit the sensitivity of magnetic, electric, strain, and temperature sensors based on nitrogen-vacancy color centers. Diamond samples may exhibit significant spatial variations in the impurity concentrations hindering the quantitative analysis of relaxation pathways. Here, we present a local measurement technique which can be used to determine the concentration of various species of defects by utilizing double electron-electron resonance. This method will help to improve the understanding of the physics underlying spin relaxation and guide the development of diamond samples, as well as offering protocols for optimiz…
Nonlinear relaxation in quantum and mesoscopic systems
2013
The nonlinear relaxation of three mesoscopic and quantum systems are investigated. Specifically we study the nonlinear relaxation in: (i) a long Josephson junction (LJJ) driven by a non-Gaussian Lévy noise current; (ii) a metastable quantum open system driven by an external periodical driving; and (iii) the electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field. In the first system the LJJ phase evolution is described by the perturbed sine-Gordon equation. Two well known noise induced effects are found: the noise enhanced stability and resonant activation phenomena. We investigate the mean escape time as a function of the bias current frequency, nois…
Nonlinear dependence on temperature and field of electron spin depolarization in GaAs semiconductors
2009
In this work the influence of temperature and drift conditions on the electron spin relaxation in lightly doped n-type GaAs bulk semiconductors is investigated. The electron transport, including the evolution of the spin polarization vector, is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium. Electron-spin states in semiconductor structures relax by scattering with imperfections, other carriers and phonons. Spin relaxation lengths and times are computed through the D'yakonov-Perel process since this is the more relevant spin relaxation mechanism in the regime of interest (10 < T < 300 K). The decay of the…
Doping dependence of spin lifetime of drifting electrons in GaAs bulks
2010
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing the lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} - 10^{16} cm^{-3}, for differ…