Search results for "stishovite"
showing 10 items of 14 documents
Luminescence of polymorphous SiO2
2016
Abstract The luminescence of self-trapped exciton (STE) was found and systematically studied in tetrahedron structured silica crystals (α-quartz, coesite, cristobalite) and glass. In octahedron structured stishovite only host material defect luminescence was observed. It strongly resembles luminescence of oxygen deficient silica glass and γ or neutron irradiated α-quartz. The energetic yield of STE luminescence for α-quartz and coesite is about 20% of absorbed energy and about 5(7)% for cristobalite. Two types of STE were found in α-quartz. Two overlapping bands of STEs are located at 2.5–2.7 eV. The model of STE is proposed as Si–O bond rupture, relaxation of created non-bridging oxygen (N…
Intrinsic absorption threshold of stishovite and coesite
2004
Abstract The optical absorption spectra of the small mono-crystals samples of stishovite and coesite were studied at first. The intrinsic absorption threshold of stishovite is determined at 8.75 eV, being probably, highest in the family of different crystalline polymorph modifications of silicon dioxide. The absorption spectrum of stishovite is independent of temperature (studied in the range 290–450 K). The intrinsic absorption threshold of coesite mono-crystal situated near 8.6 eV at 293 K, coincides within experimental errors with that of α-quartz crystal, and depends on temperature, as used to be for the tetrahedron structured silicon dioxide crystalline modifications. A broad absorptio…
Photoluminescence excited by ArF and KrF lasers and optical absorption of stishovite mono-crystal
2008
Two photoluminescence bands were found in a stishovite (silicon dioxide) mono-crystal sample under ArF (193 nm) and KrF (248 nm) excitation. The blue band is situated at 3.17 ± 0.02 eV in the case of ArF and at 3 ± 0.2 in the case of KrF. The UV band is at 4.55 ± 0.05 eV in the case of ArF and at 4.5 ± 0.05 eV in the case of KrF. The position of the UV emission band correlates with that excited by x rays. This position is 4.6 ± 0.05 eV with FWHM 0.8 ± 0.05 eV (Truhins et al 2003 Solid State Commun. 127 415). The blue band possesses slow decay kinetics with time constant 16 ± 2 µs and the UV band is fast on the level of 2 ± 0.5 ns, similarly for both lasers. Thermal quenching of both bands b…
host‐defect luminescence of stishovite
2005
a detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO2 with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of µs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminesc…
Luminescence of different modifications of crystalline silicon dioxide: Stishovite and coesite
2003
Abstract Luminescence of very small samples of single crystals of coesite and stishovite has been studied. The spectra were detected under ionizing radiation (X-ray and electron beam) and the decay kinetics of cathodoluminescence in the range of time from 10 ns to 3 ms was measured. The coesite luminescence possesses a broad band at 3 eV with exponential decay about 680 μs at 80 K. The nature of this luminescence was explained as a self-trapped exciton creation in tetrahedron framework. The stishovite luminescence possesses two bands—blue (2.8 eV) and UV (4.7 eV). The UV band intensity grows more than 20 times with irradiation dose from initial level. This shows that the corresponding lumin…
Luminescence of rutile structured crystalline silicon dioxide (stishovite)
2014
Abstract Luminescence spectrum of synthetic mono-crystalline stishovite comprises a slow blue band at ~400 nm (~3.1 eV) and a fast UV band at ~260 nm (~4.7 eV), as well as some bands in near-infrared range of spectra. The NIR luminescence of stishovite crystal, excited with lasers 532 nm, 248 nm and 193 nm as well as x-ray, possesses several sharp lines. A zero phonon line is situated at 787 nm (1.57 eV) and grows with cooling. An anti-Stokes line is located at 771 nm (1.68 eV). This line disappears with cooling. In a powder sample of stishovite created by shock waves generated by the impact of a 50-m-diameter meteorite in Arizona 50,000 years ago, the PL broad blue band is situated at 425 …
Luminescence of silicon Dioxide — silica glass, α-quartz and stishovite
2011
Abstract This paper compares the luminescence of different modifications of silicon dioxide — silica glass, α-quartz crystal and dense octahedron structured stishovite crystal. Under x-ray irradiation of pure silica glass and pure α-quartz crystal, only the luminescence of self-trapped exciton (STE) is detected, excitable only in the range of intrinsic absorption. No STE luminescence was detected in stishovite since, even though its luminescence is excitable below the optical gap, it could not be ascribed to a self-trapped exciton. Under ArF laser excitation of pure α-quartz crystal, luminescence of a self-trapped exciton was detected under two-photon excitation. In silica glass and stishov…
Comparison of model potentials for molecular-dynamics simulations of silica.
2005
Structural, thermomechanical, and dynamic properties of pure silica SiO2 are calculated with three different model potentials, namely, the potential suggested by van Beest, Kramer, and van Santen (BKS) [Phys. Rev. Lett. 64, 1955 (1990)], the fluctuating-charge potential with a Morse stretch term for the short-range interactions proposed by Demiralp, Cagin, and Goddard (DCG)[Phys. Rev. Lett. 82, 1708 (1999)], and a polarizable force field proposed by Tangney and Scandolo (TS) [J. Chem. Phys. 117, 8898 (2002)]. The DCG potential had to be modified due to flaws in the original treatment. While BKS reproduces many thermomechanical properties of different polymorphs rather accurately, it also sh…
Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)
2011
Abstract It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F 2 , 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ =1.2±0.1 ns for the range of temperatures 16–150 K. The blue band decay possesses fast and slow components. The fast component of the blue band deca…
Luminescence of localized states in silicon dioxide glass. A short review
2011
Abstract The target is the description of the properties of localized states in silica glass, which relate to aspects of short-to-intermediate-range order. It has been observed that laser light interaction with localized states of silica glass leads to the creation of luminescence centers. Created luminescence centers, excited with laser light, provide intra-center luminescence of oxygen deficient centers (ODC) comprising a blue band at 2.7 eV and a UV band at 4.4 eV. Structurally, these ODCs are understood to comprise twofold-coordinated silicons that are commonly part of some larger local structure, and their luminescence bands can be suppressed by reaction with chlorine or hydrogen. Besi…