Search results for "thin film"

Estimation of interfacial fracture toughness based on progressive edge delamination of a thin transparent coating on a polymer substrate

2010

Evaluation of interfacial toughness of sub-micron-thickness layers deposited on a ductile substrate is a challenging task which has motivated different experimental approaches Fragmentation testing was used in the present study as a means of interface characterization of a silicon-nitride-coated polyimide substrate. During the test, after an initial rapid segmentation-cracking phase, the coating fragments developed edge delaminations which propagated in a stable manner with further increase in the applied strain The debonding process was modelled by the finite element method Incorporating a cohesive zone at the front of the interfacial crack The edge cracks were found to be dominated by mod…

A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design

2016

This work introduces a compact DC model developed for organic thin film transistors (OTFTs) and its SPICE implementation. The model relies on a modified version of the gradual channel approximation that takes into account the contact effects, occurring at nonohmic metal/organic semiconductor junctions, modeling them as reverse biased Schottky diodes. The model also comprises channel length modulation and scalability of drain current with respect to channel length. To show the suitability of the model, we used it to design an inverter and a ring oscillator circuit. Furthermore, an experimental validation of the OTFTs has been done at the level of the single device as well as with a discrete-…

Monolayer and multilayer field-effect transistors based on a high-mobility n-type polymer: effect of the polymeric texture on charge transport

2012

Atomic layer deposition of WO3 thin films using W(CO)6 and O3 precursors

2012

Here we report a new atomic layer deposition (ALD) process for WO3 thin films based on W(CO)6 as a tungsten source and ozone as a source of oxygen. A narrow ALD temperature window is found at 195–205 °C for WO3 with a deposition rate of 0.23 A per cycle. As-deposited films are partially crystalline with root mean square (rms) roughness values of 4.7 nm for 90 nm thick films; annealing the films at 600–1000 °C under oxygen or nitrogen atmospheres enhances the degree of crystallinity considerably. Our results show that the straightforward ALD chemistry of carbonyl compounds and ozone is applicable to the deposition of WO3 thin films.

Probing the electronic states of high-TMR off-stoichiometric Co2MnSi thin films by hard x-ray photoelectron spectroscopy

2014

The tunnel magnetoresistance ratio (TMR) of fully epitaxial magnetic tunnel junctions with an off-stoichiometric Co${}_{2}$MnSi Heusler alloy has been shown to exhibit a systematic dependence on Mn content, reaching 1135% at 4.2 K for Co${}_{2}$Mn${}_{1.29}$Si. In this paper, we explain the behavior of the observed TMR ratio using ab initio calculations and hard x-ray photoelectron spectroscopy (HAXPES). For the Mn-deficient samples, we show that the the drop of the TMR is caused by Co antisite atoms, which impose extra states into the minority-spin band gap. On the other hand, Mn-excess composition shows nearly half-metallic behavior. This result can be intuitively understood since both Co…

Superconducting properties of Nb thin films deposited on porous silicon templates

2008

Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering on the porous Si substrates, inherited their structure made of holes of 5 or 10 nm diameter and of 10 to 40 nm spacing, which provide an artificial pinning structure. The superconducting properties were investigated by transport measurements performed in the presence of magnetic field for different film thickness and substrates with different interpore spacing. Perpendicular upper critical fields measurements present peculiar features such as a change in the H_c2(T) curvature and oscillations in the field dependenc…

Quantum wire with periodic serial structure

1991

Electron wave motion in a quantum wire with periodic structure is treated by direct solution of the Schr\"odinger equation as a mode-matching problem. Our method is particularly useful for a wire consisting of several distinct units, where the total transfer matrix for wave propagation is just the product of those for its basic units. It is generally applicable to any linearly connected serial device, and it can be implemented on a small computer. The one-dimensional mesoscopic crystal recently considered by Ulloa, Casta\~no, and Kirczenow [Phys. Rev. B 41, 12 350 (1990)] is discussed with our method, and is shown to be a strictly one-dimensional problem. Electron motion in the multiple-stu…

<title>Photoinduced AsSeS thin film phase plates as adaptive optics mirrors for eye aberration correction</title>

2008

Amorphous chalcogenide thin films are excellent materials for holographic recordings. AsSeS thin film coating is a useful optical material for it's thickness to be easily corrected with the use of exposure to light and consecutive chemical etching. Following properties allow to treat the surface of AsSeS chalcogenide films and to use them in adaptive optics systems for correction of the optical wavefront. Hereby, we characterize AsSeS film properties to be used for correction of optical aberrations of the human eye. The thickness of the film is characterized with the method of spectrodensitometry and the surface profile depth with a Hartman- Shack waveform analyzator.

PbS Nanodots Embedded in ZrO2 Thin Films for Ultraviolet Radiation Dosimetry

2011

PbS nanodots embedded in ZrO2 thin film matrix (ZrO2:PbS films) were investigated for UV radiation dosimetry purposes. ZrO2:PbS films were UV irradiated using wavelengths 250 - 400 nm. Photoelectron emission spectra of ZrO2:PbS films were recorded and band structure of the films was calculated. It was found that density of localized states increased with increase in concentration of PbS nanodots which allowed to suggest that PbS nanodots are responsible for creation of localized states. Number of localized states decreased after UV irradiation. The linear correlation between number of localized states and time of UV exposure was observed. Observed changes in band structure of ZrO2:PbS films…

Study of Photo-Induced Thin Film Growth on Cds Substrates.*

1983

ABSTRACTPhoto-induced growth of ZnS on CdS has been studied using amorphous (thin film) and single-crystal substrates. The effect has been found to occur for light of wavelength shorter than the CdS absorption edge; a maximum light-induced thickness enhancement of 700 Å has been obtained for the ZnS film, with a growth rate of 2000 Å/min. The lightinduced growth, with its observed “memory” of several minutes is consistent with photo-desorption of an adlayer.