Search results for "vat"
showing 10 items of 24801 documents
CCDC 1919440: Experimental Crystal Structure Determination
2019
Related Article: Jana Anhäuser, Rakesh Puttreddy, Lukas Glanz, Andreas Schneider, Marianne Engeser, Kari Rissanen, Arne Lützen|2019|Chem.-Eur.J.|25|12294|doi:10.1002/chem.201903164
Motivations, engagement and adoption of e-WOM in restaurants.
2022
Resumen El objetivo del presente trabajo fue estudiar el efecto que tienen las motivaciones para consultar y escribir e-WOM sobre el compromiso con el e-WOM y la influencia de dicho compromiso en la adopción del e-WOM consultado. Para analizar estas relaciones, se realizó una investigación empírica aplicada en el contexto de los restaurantes. El ámbito geográfico fue Ecuador, con una muestra de 461 consumidores. Se utilizó un modelo de ecuaciones estructurales y se validó la cadena de relaciones. Los resultados confirmaron las relaciones entre estas variables; además, se presentaron implicaciones académicas interesantes para profundizar en el estudio sobre el compromiso con el e-WOM, así co…
¿Cómo afecta la innovación en la satisfacción y la lealtad hacia el establecimiento minorista?
2021
Resumen En el presente estudio, se examinó el concepto de innovación en el sector minorista y se definieron sus relaciones con otras variables, como la satisfacción y la lealtad, tradicionalmente vinculadas con el establecimiento minorista. Para lograr los objetivos planteados, se delimitó un modelo teórico sustentado en la literatura, que se contrastó mediante un estudio empírico utilizando un cuestionario estructurado ad hoc aplicado a una muestra de 510 clientes de establecimientos de alimentación. El análisis de los datos se desarrolló mediante la técnica de regresión por mínimos cuadrados parciales. Los resultados permiten proponer un conjunto de recomendaciones para la gestión, fundam…
The transition state and cognate concepts
2019
Abstract This review aims firstly to clarify the meanings of key terms and concepts associated with the idea of the transition state, as developed by theoreticians and applied by experimentalist, and secondly to provide an update to the meaning and significance of the transition state in an era when computational simulation, in which complexity is being increasingly incorporated, is commonly employed as a means by which to bridge the realms of theory and experiment. The relationship between the transition state and the potential-energy surface for an elementary reaction is explored, with discussion of the following terms: saddle point, minimum-energy reaction path, reaction coordinate, acti…
The impact of quantitative easing on UK bank lending: Why banks do not lend to businesses?
2021
Abstract The growing proportion of UK bank lending to the financial sector reached a peak in 2007 just before the onset of the Global Financial Crisis (GFC). This marks a trend in the dwindling amount of bank lending to private sector non-financial corporations (PNFCs), which was exacerbated with the Great Recession. Many central banks aimed to revive bank lending with quantitative easing (QE) and unconventional monetary policy. We propose an agent based computational economics (ACE) model which combines the main factors in the economic environment of QE and Basel regulatory framework to analyse why UK banks do not prioritize lending to non-financial businesses. The lower bond yields caused…
Mehāniskās aktivācijas ietekme uz nātrija bismuta titanāta keramikas izgatavošanu.
2022
“Mehāniskās aktivācijas ietekme uz nātrija bismuta titanāta keramikas izgatavošanu” Atvars A., zinātniskie darba vadītāji vadošā pētniece Dr. phys. Dunce M. un asoc. prof. Dr. chem. Vaivars G. Bakalaura darbs. (46 lapas, 27 attēli, 49 literatūras avoti, 3 pielikumi). Latviešu valodā Bakalaura darba ietvaros tika veikta nātrija bismuta titanāta (Na0,5Bi0,5TiO3) un cietā šķīduma 0,975(0,94Na0,5Bi0,5TiO3-0,06BaTiO3)-0,025LiNbO3 iegūšana, izmantojot cietfāžu reakcijas metodi, veicot mehānisko aktivāciju vienā no posmiem. Nepieciešamie savienojumi tika iegūti, izmantojot nātrija karbonātu (Na¬2CO3), bismuta (III) oksīdu (Bi2O3), titāna dioksīdu (TiO2), litija karbonātu (Li2CO3), niobija (V) oksī…
Global Lp -integrability of the derivative of a quasiconformal mapping
1988
Let f be a quasiconformal mapping of an open bounded set U in Rn into Rn . Then f′ belongs to Lp(U) for some p > n provided that f satisfies (a) U is a uniform domain and fU is a John domain or (b) f is quasisymmetric and U satisfies a metric plumpness condition.
Plastic yielding of glass in high-pressure torsion apparatus
2018
International audience; Hardness measurements performed at room temperature have demonstrated that glass can flow under elevated pressure, whereas the effect of high pressure on glass rheology remains poorly quantified. Here, we applied a high-pressure torsion (HPT) apparatus to deform SCHOTT SF6 â glass and attempted to quantify the effect of pressure and temperature on the shear deformation of glass subjected to pressures from 0.3 GPa to 7 GPa and temperatures from 25 ℃ to 496 ℃. Results show that the plastic yield deformation was occurring during the HPT experiments on the SF6 glass at elevated temperature from 350 ℃ to 496 ℃. The yield stress of SF6 glass decreases with increasing tempe…
Tailoring the anomalous Hall effect of SrRuO$_3$ thin films by strain: a first principles study
2021
Motivated by the recently observed unconventional Hall effect in ultra-thin films of ferromagnetic SrRuO$_3$ (SRO) we investigate the effect of strain-induced oxygen octahedral distortion in the electronic structure and anomalous Hall response of the SRO ultra-thin films by virtue of density functional theory calculations. Our findings reveal that the ferromagnetic SRO films grown on SrTiO$_3$ (in-plane strain of $-$0.47$\%$) have an orthorhombic (both tilting and rotation) distorted structure and with an increasing amount of substrate-induced compressive strain the octahedral tilting angle is found to be suppressed gradually, with SRO films grown on NdGaO$_3$ (in-plane strain of $-$1.7$\%$…
Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition
2020
Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…