0000000000003113
AUTHOR
W. Ouerghui
Temperature dependent optical properties of stacked InGaAs/GaAs quantum rings
4 páginas, 3 figuras, 2 tablas.-- MADICA 2006 Conference, Fifth Maghreb-Europe Meeting on Materials and their Applicatons for Devices and Physical, Chemical and Biological Sensors
Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings
3 páginas, 3 figuras.
Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.