6533b856fe1ef96bd12b287f
RESEARCH PRODUCT
Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
J. GomisJuan P. Martínez-pastorM.a. MaarefDaniel GranadosW. OuerghuiJorge M. GarciaA. Mellitisubject
SuperlatticesPhononChemistrybusiness.industrySuperlatticeCondensed Matter PhysicsMolecular physicsElectronic Optical and Magnetic MaterialsTunnel effectOpticsMultilayersCr-III-V semiconductorsThin filmGround statebusinessInstrumentationQuantum tunnellingDiodeMolecular beam epitaxydescription
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-08-23 | The European Physical Journal Applied Physics |