Search results for "Superlattices"

Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

2000

6 páginas, 6 figuras, 1 tabla.

CADEM: calculate X-ray diffraction of epitaxial multilayers

2017

This article presents a powerful yet simple program, based on the general one-dimensional kinematic X-ray diffraction (XRD) theory, which calculates the XRD patterns of tailor-made multilayers and thus enables quantitative comparison of measured and calculated XRD data. As the multilayers are constructed layer by layer, the final material stack can be entirely arbitrary.

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

2006

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.

Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing

2002

Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…

Substantial enlargement of angular existence range for Dyakonov-like surface waves at semi-infinite metal-dielectric superlattice

2012

We investigated surface waves guided by the boundary of a semi-infinite layered metal-dielectric nanostructure cut normally to the layers and a semi-infinite dielectric material. Using the Floquet-Bloch formalism, we found that Dyakonov-like surface waves with hybrid polarization can propagate in dramatically enhanced angular range compared to conventional birefringent materials. Our numerical simulations for an Ag-GaAs stack in contact with glass show a low to moderate influence of losses. This research was funded by the Qatar National Research Fund under the project NPRP 09-462-1-074, by the Spanish Ministry of Economy and Competitiveness under the project TEC2009-11635, and by the Serbia…

2D photonic defect layers in 3D inverted opals on Si platforms

2006

Dielectric spheres synthesised for the fabrication of self-organized photonic crystals such as opals offer large opportunities for the design of novel nanophotonic devices. In this paper, we show a hexagonal superlattice monolayer of dielectric spheres inscribed on a 3D colloidal photonic crystal by e-beam lithography. The crystal is produced by a variation of the vertical drawing deposition method assisted by an acoustic field. The structures were chosen after simulations showed that a hexagonal super-lattice monolayer in air exhibits an even photonic band gap below the light cone if the refractive index of the spheres is higher than 1.93.

Room-temperature efficient light detection by amorphous Ge quantum wells

2013

In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%. © 2013 Cosentino et al.

Tight-binding calculation of spin splittings in semiconductor superlattices

1995

Oblique surface waves at an interface between a metal–dielectric superlattice and an isotropic dielectric

2012

We investigate the existence and dispersion characteristics of surface waves that propagate at an interface between a metal–dielectric superlattice and an isotropic dielectric. Within the long-wavelength limit, when the effective-medium (EM) approximation is valid, the superlattice behaves like a uniaxial plasmonic crystal with the main optical axes perpendicular to the metal–dielectric interfaces. We demonstrate that if such a semi-infinite plasmonic crystal is cut normally to the layer interfaces and brought into contact with a semi-infinite dielectric, a new type of surface mode can appear. Such modes can propagate obliquely to the optical axes if favorable conditions regarding the thick…

Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings

2006

We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.