6533b824fe1ef96bd128011a

RESEARCH PRODUCT

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

M. IlegemsMauro MoscaNicolas GrandjeanJ.-f. CarlinF. H. JulienMaria TchernychevaL. NevouSylvain NicolayEric Feltin

subject

GaN/AlN quantumMaterials sciencePhotoluminescencePhysics and Astronomy (miscellaneous)business.industrySUPERLATTICESSuperlatticeMULTIPLE-QUANTUM WELLSMU-Mchemistry.chemical_elementquantum dotsHeterojunctionRELAXATIONGallium nitrideEpitaxyLAYERSGANchemistryQuantum dotOptoelectronicsbusinessAbsorption (electromagnetic radiation)Quantum wellIndium

description

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.

yearjournalcountryeditionlanguage
2006-04-10
https://infoscience.epfl.ch/record/152878