6533b82afe1ef96bd128c3c0
RESEARCH PRODUCT
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
Andrés CantareroZoran B. PopovićO. LatinoviLuisa GonzálezJ. CamachoA. Milutinovisubject
DiffractionMaterials scienceIII-V semiconductorsInfraredPhononSuperlatticeGeneral Physics and AstronomyReflectivityMolecular physicsSpectral linesymbols.namesakeCondensed Matter::Materials ScienceGallium arsenideIndium compounds:FÍSICA [UNESCO]Interface phononsbusiness.industryIndium compounds ; Gallium arsenide ; III-V semiconductors ; Semiconductor superlattices ; Raman spectra ; Infrared spectra ; Reflectivity ; Interface phonons ; Semiconductor epitaxial layersUNESCO::FÍSICASemiconductor epitaxial layersInfrared spectraCondensed Matter::Mesoscopic Systems and Quantum Hall EffectsymbolsOptoelectronicsRaman spectrabusinessRaman spectroscopySemiconductor superlatticesRaman scatteringMolecular beam epitaxydescription
6 páginas, 6 figuras, 1 tabla.
year | journal | country | edition | language |
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2000-12-01 |