0000000000008793
AUTHOR
Th. Wetzel
Numerical 3D modelling of turbulent melt flow in a large CZ system with horizontal DC magnetic field. II. Comparison with measurements
This paper presents a comparison between numerically calculated and measured temperature distributions in turbulent flow in a laboratory model for a CZ large silicon single crystal industrial growth system with a horizontal DC magnetic field. The laboratory model consists of an electrically heated 20” crucible with low-temperature InGaSn melt, a water-cooled metallic crystal model, and a magnet system creating a horizontal magnetic field in the range 0–. Distributions of time-averaged temperature values in various cross sections in the melt are obtained from measurements by a multichannel thermocouple system. A 3D numerical model for the scalar potential induced in the melt by the velocity …
Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility
The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating AC and CUSP magnetic fields. Such fields are expected to provide an additional means to influence the melt behaviour, particularly in the industrial growth of large diameter silicon crystals. The simulation tool is based on axisymmetric 2D models for the AC and CUSP magnetic fields in the whole CZ facility and turbulent hydrodynamics, temperature and mass transport in the melt under the influence of the electromagnetic fields. The simulation tool is verified by comparisons to experimental results from a laboratory CZ setup with eutec…
Prediction of the growth interface shape in industrial 300mm CZ Si crystal growth
Abstract A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300 mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300 mm Si CZ growth experiments with 200 kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Neverthele…
Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth
The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200 mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for r…
Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields
Abstract The paper presents results of 2D axisymmetric mathematical modelling of laboratory CZ model facility that corresponds well to a large industrial silicon CZ growth system. The purpose of the investigation is to examine turbulent melt flow features that develop in the model crucible, when various dynamic magnetic fields (travelling, alternating) are applied, and to test the applicability of the modified low Re k–e turbulence model for the calculation of flows in these cases by extensive comparisons between calculated and measured data. The electromagnetic field is calculated with a self-developed program, and the calculations of the melt motion are carried out with the user modified …
Simplified Monte Carlo simulations of point defects during industrial silicon crystal growth
Abstract The paper proposes Monte-Carlo method-based 2D and 3D models of vacancies and interstitials in a cubic crystal. The model exploits the concept of lattice gas with covalent bounds between neighbour nodes. Two lattices shifted by half-period serve as nodes for atoms of the main crystal and interstitials. Distribution of particles between both lattices characterizes the entropy of the crystal. Successfully chosen interaction energies between main and sub-lattices allows the authors to detect a phase transition solid–liquid as well as to study the production of crystal defects/their agglomeration as a function of cooling/heating rate. Although the introduced 3D modification of the mode…