0000000000011233

AUTHOR

Abdellatif Hasnaoui

showing 4 related works from this author

An empirical model for free surface energy of strained solids at different temperature regimes.

2006

Abstract We have developed an empirical formulation, based on the elastic theory, to calculate the variation of the surface free energy when a crystal is strained in the elastic regime. The model permits to obtain the variation of the surface energy at different strains and temperatures when are known the thermal dependence on the bulk and surface elastic constants. Molecular dynamics (MD) simulations were performed using the three low index surfaces of Al, to validate the accuracy of the model. The comparison between the empirical model and the MD simulations shows a good agreement for temperatures ranging between 0 and 900 K, and for deformation between −2% and 2%.

Surface (mathematics)ChemistryGeneral Physics and AstronomyThermodynamicsmodelingSurfaces and InterfacesGeneral ChemistryMolecular dynamicsCondensed Matter PhysicsSurface energySurfaces Coatings and FilmsStrain energyCrystalMolecular dynamicsPACS: 68.35.Md; 31.15.Qgsurface energyFree surface[ CHIM.MATE ] Chemical Sciences/Material chemistryThermalStatistical physicsDeformation (engineering)
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Nanoscale oxide growth on Al single crystals at low temperatures: Variable charge molecular dynamics simulations

2006

We investigate the oxidation of aluminum low-index surfaces [(100), (110), and (111)] at low temperatures (300-600 K) and three different gas pressure values. We use molecular dynamics (MD) simulations with dynamic charge transfer between atoms where the interaction between atoms is described by the Es+ potential composed of the embedded atom method (EAM) potential and an electrostatic contribution. In the considered temperature range and under different gas pressure conditions, the growth kinetics follow a direct logarithmic law where the oxide thickness is limited to a value of ∼3 nm. The fitted curves allow us to determine the temperature and the pressure dependencies of the parameters i…

Materials scienceOxide02 engineering and technology01 natural sciences7. Clean energyDissociation (chemistry)chemistry.chemical_compoundMolecular dynamics[ CHIM.CRIS ] Chemical Sciences/Cristallography0103 physical sciencesAtomOxidation[CHIM.CRIS]Chemical Sciences/CristallographyTheory and models of film growthMolecule010306 general physicsComputational modelingAtmospheric temperature range021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsOctahedronchemistryTetrahedronAtomic physics0210 nano-technologySimulation
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Determination of the stress distribution at the interface metal-oxide: Numerical and theoretical considerations

2005

In this paper we give a brief presentation of the approaches we have recently developed on the oxidation of metals. Firstly, we present an analytical model based on non-equilibrium thermodynamics to describe the reaction kinetics present during the oxidation of a metal. Secondly, we present the molecular dynamics results obtained with a code specially tailored to study the oxidation and growth of an oxide film of aluminium. Our simulations present an excellent agreement with experimental results.

RadiationChemistryInterface (Java)Oxidechemistry.chemical_elementNon-equilibrium thermodynamicsThermodynamicsStress distributionCondensed Matter PhysicsMetalchemistry.chemical_compoundMolecular dynamicsAluminiumvisual_artvisual_art.visual_art_mediumGeneral Materials Science
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Molecular dynamics simulations of the nano-scale room-temperature oxidation of aluminum single crystals

2005

The oxidation of aluminum single crystals is studied using molecular dynamics (MD) simulations with dynamic charge transfer between atoms. The simulations are performed on three aluminum low-index surfaces ((1 0 0), (1 1 0) and (1 1 1)) at room temperature. The results show that the oxide film growth kinetics is independent of the crystallographic orientation under the present conditions. Beyond a transition regime (100 ps) the growth kinetics follow a direct logarithmic law and present a limiting thickness of 3 nm. The obtained amorphous structure of the oxide film has initially Al excess (compared to the composition of Al2O3) and evolves, during the oxidation process, to an Al percentage …

Oxidechemistry.chemical_elementSurfaces and InterfacesCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidchemistry.chemical_compoundCrystallographyMolecular dynamicschemistryChemical physicsAluminiumMaterials ChemistryOxidation processThin filmPorosityNanoscopic scaleSurface Science
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