Dislocations in AIIIBVI single crystals

High densities of planar defects are evidenced in various AIIIBVI layer compounds by systematic electron microscopy observations with the dark-field weak-beam image technique. Several samples are analyzed, as obtained from different crystal ingots of InSe grown by the Bridgman-Stockbarger method, and some GaS and GaSe single crystals grown both, from the melt and from the vapour. The observed defects are identified mainly as screw and edge dislocations, the orientation of which is obtained in some cases by the analysis of the Moire fringes. Dislocation densities ranging between 108 and 1010 cm−2 are measured, not uniformly distributed in the various regions of each sample. Finally, the obse…