0000000000012407
AUTHOR
Saadah Abdul Rahman
Evolution of structural and electronic properties of TiSe2 under high pressure
A pressure-induced structural phase transition and its intimate link with the superconducting transition was studied for the first time in TiSe2 up to 40 GPa at room temperature using X-ray diffraction, transport measurement, and first-principles calculations. We demonstrate the occurrence of a first-order structural phase transition at 4 GPa from the standard trigonal structure (S.G.P3¯m1) to another trigonal structure (S-G-P3¯c1). Additionally, at 16 GPa, the P3¯c1 phase spontaneously transforms into a monoclinic C2/m phase, and above 24 GPa, the C2/m phase returns to the initial P3¯m1 phase. Electrical transport results show that metallization occurs above 6 GPa. The charge density wave …
Pressure-induced structural evaluation and insulator-metal transition in the mixed spinel ferrite Zn0.2Mg0.8Fe2O4
The effect of pressure on the electronic properties and crystal structure in a mixed spinel ferrite $\mathrm{Z}{\mathrm{n}}_{0.2}\mathrm{M}{\mathrm{g}}_{0.8}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{4}$ was studied for the first time up to 48 GPa at room temperature using x-ray diffraction, Raman spectroscopy, and electrical transport measurements. The sample was cubic (spinel-type $Fd\overline{3}m$) at ambient pressure and underwent a pressure-induced structural transition to an orthorhombic phase $(\mathrm{CaT}{\mathrm{i}}_{2}{\mathrm{O}}_{4}\ensuremath{-}\mathrm{type}\phantom{\rule{0.16em}{0ex}}Bbmm)$ at 21 GPa. This structural transformation corresponded to a first-order phase transition …
Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te
Element doping and pressure compression may change material properties for improved performance in applications. We report pressure-induced metallization in the semiconductor $\mathrm{C}{\mathrm{d}}_{0.90}\mathrm{Z}{\mathrm{n}}_{0.1}\mathrm{Te}$. Transport measurements showed an overall resistivity drop of 11 orders of magnitude under compression up to 12 GPa, which is indicative of a metallization transition. X-ray diffraction measurements revealed that the sample underwent a structural transition from a cubic-$F4\overline{3}m$ phase (zinc blende) to a cubic-$Fm\overline{3}m$ phase (rock salt) at about 5.5 GPa, followed by another transition to an orthorhombic $Cmcm$ structure at 13 GPa. A…
Pressure-induced structural and semiconductor-semiconductor transitions in Co0.5Mg0.5Cr2O4
The effect of pressure on the structural, vibrational, and electronic properties of Mg-doped Cr bearing spinel $\mathrm{C}{\mathrm{o}}_{0.5}\mathrm{M}{\mathrm{g}}_{0.5}\mathrm{C}{\mathrm{r}}_{2}{\mathrm{O}}_{4}$ was studied up to 55 GPa at room-temperature using x-ray diffraction, Raman spectroscopy, electrical transport measurements, and ab initio calculations. We found that the ambient-pressure phase is cubic (spinel-type, $Fd\overline{3}m$) and underwent a pressure-induced structural transition to a tetragonal phase (space group $I\overline{4}m2$) above 28 GPa. The ab initio calculation confirmed this first-order phase transition. The resistivity of the sample decreased at low pressures …