Synchrotron radiation multiple diffraction study of Al0.304Ga0.172In0.524As MOVPE grown onto InP(001)

Synchrotron radiation multiple diffraction in Renninger scanning (RS) geometry is used to characterise an Al0.304Ga0.172In0.524 As hetero-epitaxial layer MOVPE grown onto InP(001). (006) RS data for bulk, InP substrate and the quaternary layer were obtained using a new experimental set-up on station 7.6 at the Daresbury synchrotron radiation source. Examination of the multiple diffraction peak profiles reveal the epitaxial layers to have a higher mosaic spread than the underlying substrate materials. Measurements of the layer parallel lattice parameter a∥ = 5.8755 ± 0.003 A, as deduced from the tetragonal distortion measured at the 6-beam case in the layer RS, agrees very well with that obt…