Electron paramagnetic resonance investigation on the hyperfine structure of the E’_delta center in amorphous silicon dioxide

Experimental evidence for two different precursors of E’γ centers in silica

Electron paramagnetic resonance measurements of concentration and line shape of centers induced by γ ray irradiation are presented for natural and synthetic commercial silica with different OH contents. Synthetic materials with OH content >200 ppm by weight show one line shape for all investigated doses. In contrast, the other materials show a different line shape at low irradiation doses. Differences are also observed in the concentration growth of the centers in synthetic wet materials and in the other materials. The results are interpreted as evidence of two centers distinguishable by their line shape and having different precursors.

Delocalized Nature of the E'-delta Center in Amorphous Silicon Dioxide

We report an experimetal study by Electron Paramagnetic Resonance (EPR) of E'-delta point defect induced by gamma ray irradiation in amorphous SiO2. We obtained an estimetion of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I=1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E'-delta center, we pointed out that unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.