0000000000017641

AUTHOR

Simo-pekka Hannula

showing 5 related works from this author

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

2014

In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content i…

Materials scienceSiliconSilicon dioxideta221Conformal coatingAnalytical chemistrychemistry.chemical_elementchemistry.chemical_compoundAtomic layer depositionMaterials ChemistryAtomic layer epitaxySilicon dioxideta318Thin filmta216ta116Plasma processingplasma-enhanced atomic layer depositionPlasma-enhanced atomic layer depositionsilicon dioxideconformal coatingta213ta114Atomic layer depositionbatch depositionIon platingMetals and AlloysPrecursorsSurfaces and InterfacesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistryatomic layer depositionprecursorsBatch depositionDeposition (chemistry)
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Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition

2021

Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353) of the Academy of Finland. Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220 ) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353 ) of the Academy of Finland. Publisher Copyright: © 2021 The use of thin-films made by atomic layer deposition (ALD) is increasing in …

optical propertiesMaterials scienceAnnealing (metallurgy)elastic modulusresidual stress02 engineering and technologyoptiset ominaisuudet01 natural sciencesStress (mechanics)Atomic layer depositionResidual stressTiO0103 physical sciencesMaterials ChemistryTiO2Composite materialThin filmElastic modulus010302 applied physicsMetals and AlloysSurfaces and Interfacesatomikerroskasvatus021001 nanoscience & nanotechnologyhardnessSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialsfysikaaliset ominaisuudetAtomic Layer DepositionALDatomic layer depositionohutkalvot0210 nano-technologytitaanidioksidiRefractive indexLayer (electronics)
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Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

2017

Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm),…

Materials scienceSiliconta221chemistry.chemical_elementNanotechnologyresidual stress02 engineering and technology01 natural sciencesStress (mechanics)chemistry.chemical_compoundAtomic layer depositioncontact modulusResidual stress0103 physical sciencesnanolaminatesThin filmComposite materialalumiinita216010302 applied physicsNanocompositeta114BilayeraluminiumSurfaces and Interfacesatomikerroskasvatus021001 nanoscience & nanotechnologyCondensed Matter PhysicshardnessSurfaces Coatings and FilmsadhesionnanolaminatechemistryAtomic Layer DepositionALDTitanium dioxide0210 nano-technologyJournal of Vacuum Science and Technology A
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Tribological properties of thin films made by atomic layer deposition sliding against silicon

2018

Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike car…

kitkaMaterials scienceSiliconDiamond-like carbonfrictionnanomateriaalitchemistry.chemical_element02 engineering and technologyNitride01 natural sciencesAtomic layer deposition0103 physical sciencesComposite materialThin filmta216nanomaterials010302 applied physicsNanocompositeatomsta115ta114tribologiaSurfaces and InterfacesTribologyatomikerroskasvatus021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and Filmsatomitchemistrythin filmsatomic layer depositiontribologyohutkalvot0210 nano-technologyContact areaJOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A
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Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness a…

2014

Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300 C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by na…

Materials scienceta221Residual stressAluminum oxideStress (mechanics)Atomic layer depositionEllipsometryResidual stressHardnessMaterials Chemistryta318Thin filmComposite materialta216ta116Elastic modulusta213ta114Atomic layer depositionMetals and AlloysSurfaces and InterfacesNanoindentationSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsElastic recoil detectionAdhesionElastic modulus
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