6533b827fe1ef96bd128672b
RESEARCH PRODUCT
Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
Matti PutkonenSaima AliOili YlivaaraEero HaimiRiikka L. PuurunenTimo SajavaaraHarri LipsanenEugene Joseph KarwackiIain BuchananSakari SintonenMika Vähä-nissiSimo-pekka HannulaXuwen LiuHelena RonkainenLauri KilpiMarkus Bosundsubject
Materials scienceSiliconSilicon dioxideta221Conformal coatingAnalytical chemistrychemistry.chemical_elementchemistry.chemical_compoundAtomic layer depositionMaterials ChemistryAtomic layer epitaxySilicon dioxideta318Thin filmta216ta116Plasma processingplasma-enhanced atomic layer depositionPlasma-enhanced atomic layer depositionsilicon dioxideconformal coatingta213ta114Atomic layer depositionbatch depositionIon platingMetals and AlloysPrecursorsSurfaces and InterfacesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistryatomic layer depositionprecursorsBatch depositionDeposition (chemistry)description
In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-05-01 |