0000000000017778
AUTHOR
Ziv Hameiri
Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$
This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter $\gamma$ . We demonstrate how the model can be used to predict $\gamma$ for various single level defects. Additionally, we show that $\gamma$ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling …
A Novel Method for Characterizing Temperature Sensitivity of Silicon Wafers and Cells
In this paper, we present a novel method to obtain temperature dependent lifetime and implied-open-circuit voltage (iV OC ) images of silicon wafers and solar cells. First, the method is validated by comparing the obtained values with global values acquired from lifetime measurements (for wafers) and current-voltage measurements (for cells). The method is then extended to acquire spatially resolved images of iV OC temperature coefficients of silicon wafers and cells. Potential applications of the proposed method are demonstrated by investigating the temperature coefficients of various regions across multi-crystalline silicon wafers and cells from different heights of two bricks with differe…
A high-accuracy calibration method for temperature dependent photoluminescence imaging
This work demonstrates a novel technique for calibrating temperature dependent photoluminescence (PL) images of silicon wafers with high accuracy. The PL signal is calibrated using a heat-controlled photoconductance (PC) stage integrated into the PL imaging system. The PC signal is measured in true steady state condition and used to determine the calibration constant under the same temperature and illumination as the PL image, thus providing a high-precision calibration. This results in a robust method for imaging of important physical parameters, such as the minority carrier lifetime and the implied voltage at different temperatures, as well as the temperature coefficients and the recombin…
Photoluminescence-Based Spatially Resolved Temperature Coefficient Maps of Silicon Wafers and Solar Cells
In this article, we present a method to obtain implied open-circuit voltage images of silicon wafers and cells at different temperatures. The proposed method is then demonstrated by investigating the temperature coefficients of various regions across multicrystalline silicon wafers and cells from different heights of two bricks with different dislocation densities. Interestingly, both low and high temperature coefficients are found in dislocated regions on the wafers. A large spread of temperature coefficient is observed at regions with similar performance at 298 K. Reduced temperature sensitivity is found to be correlated with the increasing brick height and is exhibited by both wafers and…
How Gettering Affects the Temperature Sensitivity of the Implied Open Circuit Voltage of Multicrystalline Silicon Wafers
The temperature sensitivity of the open circuit voltage of a solar cell is mainly driven by changes in the intrinsic carrier concentration, but also by the temperature dependence of the limiting recombination mechanisms in the cell. This paper investigates the influence of recombination through metallic impurities on the temperature sensitivity of multicrystalline silicon wafers. Spatially resolved temperature dependent analysis is performed to evaluate the temperature sensitivity of wafers from different brick positions before and after being subjected to phosphorus diffusion gettering. Local spatial analysis is performed on intra-grain areas, dislocation clusters and grain boundaries. Lar…
Temperature Coefficients of Crystal Defects in Multicrystalline Silicon Wafers
This article investigates the influence of crystallographic defects on the temperature sensitivity of multicrystalline silicon wafers. The thermal characteristics of the implied open-circuit voltage is assessed since it determines most of the total temperature sensitivity of the material. Spatially resolved temperature-dependent analysis is performed on wafers from various brick positions; intragrain regions, grain boundaries, and dislocation clusters are examined. The crystal regions are studied before and after subjecting the wafers to phosphorus gettering, aiming to alter the metallic impurity concentration in various regions across the wafers. Most intragrain regions and grain boundarie…
Temperature Sensitivity of Multicrystalline Silicon Solar Cells
This paper presents an experimental investigation of the temperature coefficients of multicrystalline silicon solar cells. The aim was to determine if some cell parameters can affect positively the temperature sensitivity without detrimental impact on the efficiency. Commercial solar cells with different bulk resistivities, compensation levels, and cell architectures have been studied. We report that the base net doping, the location of the solar cell along the brick and the cell architecture have significant impacts on the temperature coefficients. Moreover, we show how the change in recombination mechanisms along the ingot height affects the temperature coefficients. The compensation leve…