6533b7d4fe1ef96bd1261ce3

RESEARCH PRODUCT

Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$

Sissel Tind KristensenAlfredo Sanchez GarciaShuai NieZiv HameiriRune Strandberg

subject

Materials scienceSiliconOpen-circuit voltageSemiconductor device modelingchemistry.chemical_element02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesTemperature measurement0104 chemical sciencesComputational physicschemistryCrystalline siliconSensitivity (control systems)0210 nano-technologyTemperature coefficientRecombination

description

This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter $\gamma$ . We demonstrate how the model can be used to predict $\gamma$ for various single level defects. Additionally, we show that $\gamma$ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling more accurate temperature coefficient modeling.

yearjournalcountryeditionlanguage
2020-06-142020 47th IEEE Photovoltaic Specialists Conference (PVSC)
https://doi.org/10.1109/pvsc45281.2020.9300400