0000000000019420
AUTHOR
Saül Vélez
Tunable Sign Change of Spin Hall Magnetoresistance in Pt/NiO/YIG Structures
Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO "spin flop" coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of m…
Interface-Assisted Sign Inversion of Magnetoresistance in Spin Valves Based on Novel Lanthanide Quinoline Molecules
Molecules are proposed to be an efficient medium to host spin-polarized carriers, due to their weak spin relaxation mechanisms. While relatively long spin lifetimes are measured in molecular devices, the most promising route toward device functionalization is to use the chemical versatility of molecules to achieve a deterministic control and manipulation of the electron spin. Here, by combining magnetotransport experiments with element-specific X-ray absorption spectroscopy, this study shows the ability of molecules to modify spin-dependent properties at the interface level via metal–molecule hybridization pathways. In particular, it is described how the formation of hybrid states determine…