0000000000046650
AUTHOR
B. Y. Zaulychny
Influence of semiconducting electrodes on properties of thin ferroelectric films
The influence of semiconducting electrodes on the properties of thin ferroelectric films is considered within the framework of the phenomenological Ginzburg-Landau theory. The contribution of the electric field produced by charges in the electrodes allowing for the screening length of the carriers is included in the functional of the free energy and so in the Euler-Lagrange equation for the film's polarization. Application of the variational method to the solution of this equation allows the transformation of the free energy functional into a conventional type of free energy with renormalized coefficients. The obtained dependence of the coefficients on the film thickness, temperature, elect…
Properties of Thin Ferroelectric Film with Different Electrodes
The influence of different metallic and semiconducting electrodes on the properties of thin ferroelectric films is considered within the framework of the phenomenological Ginzburg-Landau theory. Allowing for the effect of charge screening in metals and semiconductors, the contribution of electric field produced by charges in the electrodes is included into the functional of free energy and, hence, to the Euler-Lagrange equation for film polarization. Application of variational method to this equation solution permitted the transformation of the free energy functional into a conventional type free energy with a renormalized coefficient before P 2 , the coefficient being dependent on the both…
Depolarization Field and Properties of Thin Ferroelectric Films with Inclusion of the Electrode Effect
The influence of metallic electrodes on the properties of thin ferroelectric films is considered in the framework of the Ginzburg-Landau phenomenological theory. The contribution of the electrodes with different screening lengths l s of carriers in the electrode material is included in the free-energy functional. The critical temperature T cl , the critical thickness of the film, and the critical screening length of the electrode at which the ferroelectric phase transforms into the paraelectric phase are calculated. The Euler-Lagrange equation for the polarization P is solved by the direct variational method. The results demonstrate that the film properties can be calculated by minimizing t…
Ferroelectric thin film properties with account of metallic electrodes and depolarization field influence
Within the framework of the phenomenological Ginzburg-Landau theory influence of metallic electrodes on the properties of thin ferroelectric films is considered. The contribution of the metallic electrodes with different screening length of carriers is included in functional of free energy. The influence of conventional metallic electrodes on the depolarization field and the film properties was shown to be practically the same as for superconductive ones.
Depolarization field in thin ferroelectric films with account of semiconductor electrodes
Within the framework of the phenomenological Ginzburg-Landau theory influence of semiconductor electrodes on the properties of thin ferroelectric films is considered. The contribution of the semiconductor electrodes with different Debye screening length of carriers is included in functional of free energy. The influence of highly doped semiconductor electrodes on the depolarization field and the film properties was shown to be great.
Depolarization Field in Thin Ferroelectric Films With Account of Semiconductor Electrodes
Within the framework of the phenomenological Ginzburg-Landau theory influence of semiconductor electrodes on the properties of thin ferroelectric films is considered. The contribution of the semiconductor electrodes with different Debye screening length of carriers is included in the functional of free energy. The influence of highly doped semiconductor electrodes on the depolarization field and the film properties was shown to be great.