0000000000067697
AUTHOR
S. Zazubovich
On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals
The work was supported by the ERDF funding in Estonia granted to the Center of Excellence TK141 “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelec-tronics“ (project No. 2014-2020.4.01.15-0011). Partial support of the projects from the Ministry of Education, Youth and Sports of the Czech Republic no. LO1409, LM2015088 and CZ.02.1.01/0.0/0.0/16 013/ 0001406 is also gratefully acknowledged.
Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
The work was supported by the Institutional Research Funding IUT02-26 of the Estonian Ministry of Education and Research and the project 16-15569S of the Czech Science Foundation.
Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals
Abstract Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520 K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4 K, 8 K, or 80 K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron …
Effect of Mg 2+ ions co-doping on luminescence and defects formation processes in Gd 3 (Ga,Al) 5 O 12 :Ce single crystals
The work was supported by the Institutional Research Funding IUT02-26 of the Estonian Ministry of Education and Research and the project 16-15569S of the Czech Science Foundation.