0000000000083748
AUTHOR
V. V. Ursaki
Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure
In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB(2)X(4) ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pres…
Nonlinear pressure dependence of the direct band gap in adamantine ordered-vacancy compounds
A strong nonlinear pressure dependence of the optical absorption edge has been measured in defect chalcopyrites CdGa{sub 2}Se{sub 4} and HgGa{sub 2}Se{sub 4}. The behavior is due to the nonlinear pressure dependence of the direct band-gap energy in these compounds as confirmed by ab initio calculations. Our calculations for CdGa{sub 2}Se{sub 4}, HgGa{sub 2}Se{sub 4} and monoclinic {beta}-Ga{sub 2}Se{sub 3} provide evidence that the nonlinear pressure dependence of the direct band-gap energy is a general feature of adamantine ordered-vacancy compounds irrespective of their composition and crystalline structure. The nonlinear behavior is due to a conduction band anticrossing at the {Gamma} po…
Crystal Chemistry of CdIn2S4, MgIn2S4, and MnIn2S4 Thiospinels under High Pressure
We report X-ray diffraction measurements in CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature and high pressures. The pressure dependences of the structural parameters have been determined and compared to those from theoretical calculations. It is found that the three thiospinels have similar bulk moduli (B-0) between 75 and 80 GPa (B-0' similar to 3). The degree of inversion of these thiospinels has also been determined. The three thiospinels undergo a phase transition toward a defect LiTiO2-type structure above 9.5, 8.3, and 6.8 GPa in CdIn2S4, MgIn2S4, and MnIn2S4, respectively. Interestingly, the low- and high-pressure phases belong to the same symmetry group (Fd-3m), the tr…
HgGa2 Se4 under high pressure: An optical absorption study
High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order–disorder processes that occur in this ordered-vacancy compound. Two different experiments have been carried out in which the sample undergoes either a partial or a total pressure-induced disorder process at 15.4 and 30.8 GPa, respectively. It has been found that the direct bandgap energies of the recovered samples at 1 GPa were around 0.15 and 0.23 eV smaller than that of the original sample, respectively, and that both recovered samples have different pressure coefficients of the dir…
Lattice dynamics of ZnAl2O4 and ZnGa2O4 under high pressure
In this work we present a ¿rst-principles density functional study of the vibrational properties of ZnAl2 O4 and ZnGa2 O4 as function of hydrostatic pressure. Based on our previous structural characterization of these two compounds under pressure, herewith, we report the pressure dependence on both systems of the vibrational modes for the cubic spinel structure, for the CaFe2 O4-type structure (Pnma) in ZnAl2 O4 and for marokite (Pbcm) ZnGa2 O4. Additionally we report a second order phase transition in ZnGa2 O4 from the marokite towards the CaTi2 O4-type structure (Cmcm), for which we also calculate the pressure dependence of the vibrational modes at the ¿ point. Our calculations are comple…
Post-spinel transformations and equation of state inZnGa2O4: Determination at high pressure byin situx-ray diffraction
Room-temperature angle-dispersive x-ray diffraction measurements on spinel ZnGa{sub 2}O{sub 4} up to 56 GPa show evidence of two structural phase transformations. At 31.2 GPa, ZnGa{sub 2}O{sub 4} undergoes a transition from the cubic spinel structure to a tetragonal spinel structure similar to that of ZnMn{sub 2}O{sub 4}. At 55 GPa, a second transition to the orthorhombic marokite structure (CaMn{sub 2}O{sub 4}-type) takes place. The equation of state of cubic spinel ZnGa{sub 2}O{sub 4} is determined: V{sub 0} = 580.1(9) {angstrom}{sup 3}, B{sub 0} = 233(8) GPa, B'{sub 0} = 8.3(4), and B''{sub 0} = -0.1145 GPa{sup -1} (implied value); showing that ZnGa{sub 2}O{sub 4} is one of the less comp…
Lattice Dynamics Study of HgGa2Se4 at High Pressures
We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high pressures which agree with experiments. Measurements evidence that the semiconductor HgGa2Se4 exhibits a pressure-induced phase transition above 19 GPa to a previously undetected structure. This transition is followed by a transformation to a Raman-inactive phase above 23.4 GPa. On downstroke from 25 GPa until 2.5 GPa, a broad Raman spectrum was observed, which has been attributed to a fourth phase, and whose pressure dependence was followed during a second upstroke. Candidate …