0000000000084207

AUTHOR

Lucia Nasi

showing 4 related works from this author

Mechanically stable metal layers for ohmic and blocking contacts on CdZnTe detectors by electroless deposition

2015

CdZnTe detectors are commonly exploited for the detection of gamma rays. However, obtaining mechanical stable, low noise contacts on CdZnTe is still an issue. In particular, ohmic contacts would be preferable for high flux applications. In this work, we show that it is possible to obtain mechanical stable gold contacts by electroless deposition in methanol solution. Moreover, we show that electroless deposited nickel contacts are also mechanical stable and are good candidates for the realization of ohmic contacts on high resistivity CdZnTe crystals.

Radiology Nuclear Medicine and ImagingMaterials scienceContactschemistry.chemical_elementElectroless depositionCrystalsMetalNickelOhmic contactAnodesInstrumentationNuclear and High Energy Physicbusiness.industryBlocking (radio)MethanolMetallurgyDetectorSettore FIS/01 - Fisica SperimentaleDetectorsSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)AnodeLow noiseNickelchemistryvisual_artvisual_art.visual_art_mediumOptoelectronicsGoldbusiness
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Improved electroless platinum contacts on CdZnTe X- and γ-rays detectors

2020

AbstractPlatinum is a promising candidate for the realization of blocking electrical contacts on cadmium-zinc-telluride (CdZnTe or CZT) radiation detectors. However, the poor mechanical adhesion of this metal often shortens the lifetime of the final device. In this work, a simple and effective procedure to obtain robust platinum contacts by electroless deposition is presented. Microscopical analysis revealed the final thickness and composition of the contact layer and its adhesion to the bulk crystal. The blocking nature of the Pt-CdZnTe junction, essential to obtain low noise devices, was confirmed by current–voltage measurements. The planar Pt-CdZnTe-Pt detectors showed good room temperat…

0301 basic medicineMaterials for devicesMaterials sciencechemistry.chemical_elementlcsh:MedicineElectronCZT detectorELECTRIC-FIELD PROFILE;TRANSIENT-CURRENT;TRANSPORT-PROPERTIESPULSE-SHAPE;CDTE;PERFORMANCE;RESISTIVITY;DEPOSITION;BULKParticle detectorArticle03 medical and health sciences0302 clinical medicinePlanarlcsh:ScienceMultidisciplinarybusiness.industrySettore FIS/01 - Fisica SperimentaleDetectorlcsh:RCarrier lifetimeX-ray and gamma ray detectorSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Electrical contactsMaterials scienceFull width at half maximum030104 developmental biologychemistrysemiconductor detectorOptoelectronicslcsh:QbusinessPlatinum030217 neurology & neurosurgeryScientific Reports
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Role of B diffusion in the interfacial Dzyaloshinskii-Moriya interaction inTa/Co20Fe60B20/MgOnanowires

2015

We report on current-induced domain wall motion in $\mathrm{Ta}/\mathrm{C}{\mathrm{o}}_{20}\mathrm{F}{\mathrm{e}}_{60}{\mathrm{B}}_{20}/\mathrm{MgO}$ nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient $D=+0.06\phantom{\rule{0.16em}{0ex}}\mathrm{mJ}/{\mathrm{m}}^{2}$. The positive DMI coefficient is interpreted to be a consequence of B diffusion into the Ta bu…

PhysicsCondensed matter physicsAnnealing (metallurgy)Nanowire02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsMagnetic field0103 physical sciencesElectron flow010306 general physics0210 nano-technologyPhysical Review B
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The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

2013

[EN] The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots with density in the low 10(9) cm(-2) range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rat…

LuminescencePhotoluminescenceMaterials scienceEvolutionExcitonPopulationMu-mPhysics::OpticsGeneral Physics and AstronomyCarrier transferWellGallium arsenideEmissionCondensed Matter::Materials Sciencechemistry.chemical_compoundLaser linewidtheducationPhotoluminescenceIslandseducation.field_of_studyCondensed Matter::Otherbusiness.industryCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCrystallographic defectDynamicsbimodal-sized InAs/(In)GaAs quantum dots thermal population dark statesEscapechemistryQuantum dotTransmission electron microscopyFISICA APLICADAOptoelectronicsbusinessJournal of Applied Physics
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