0000000000091160
AUTHOR
S. Girard
Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide
We investigate the origin of a resonance Raman band induced by ionizing radiation in amorphous silicon dioxide (silica glass), which can be detected under ultraviolet laser excitation. A silica sample, rich of oxygen-excess related defects, was prepared by treating some length of a pure-silica-core multimode fiber in an O2 atmosphere (at high temperature and pressure) and by irradiating it with X-rays at 10 MGy(SiO2) dose. A micro-Raman study revealed a gaussian band peaking at 896 cm−1 with a full width at half maximum of 32 cm−1, which could be detected by exciting the sample with the 325-nm line of a HeCd laser. This spectral feature is absent in the Raman spectra performed with the 442-…
Photocycle of point defects in highly- and weakly-germanium doped silica revealed by transient absorption measurements with femtosecond tunable pump.
AbstractWe report pump-probe transient absorption measurements addressing the photocycle of the Germanium lone pair center (GLPC) point defect with an unprecedented time resolution. The GLPC is a model point defect with a simple and well-understood electronic structure, highly relevant for several applications. Therefore, a full explanation of its photocycle is fundamental to understand the relaxation mechanisms of such molecular-like systems in solid state. The experiment, carried out exciting the sample resonantly with the ultraviolet (UV) GLPC absorption band peaked at 5.1 eV, gave us the possibility to follow the defect excitation-relaxation dynamics from the femto-picosecond to the nan…