0000000000122307
AUTHOR
H Mostéfa-sba
Molybdenum deposition on TiO2 (110) surfaces with different stoichiometries
Abstract The deposition of ultra thin molybdenum films has been carried out on three different TiO 2 surfaces: a stoichiometric and flat one obtained after annealing, a non stoichiometric and rough surface made by Ar + bombardment and a stoichiometric and rough surface obtained by oxygen bombardment. Whatever the substrate preparation, in situ AES and XPS studies and ex situ AFM and RHEED characterizations have revealed a Stranski–Krastanov growth mode: the completion of three monolayers followed by island growth is observed in any case. The three monolayers are composed of amorphous molybdenum oxide with a molybdenum oxidation state between III and IV. The oxidation of the molybdenum layer…
Iron deposition on TiO2(110): effect of the surface stoichiometry and roughness
Abstract Characterizations of ultra-thin iron films deposited on TiO 2 (110) surfaces with different stoichiometries, roughnesses and crystallinities have been carried out by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). For a high initial roughness of the substrate, a 2D growth mode is observed up to three monolayers. But, if the initial roughness is low, clusters grow on the TiO 2 surface. Whatever the initial surface stoichiometry, electronic exchanges occur between titanium and iron leading to a reduction of titanium and an oxidation of iron. This interaction between iron and titanium dioxide surface takes place only at the interface between the metal and…
SEM and XPS studies of titanium dioxide thin films grown by MOCVD
Abstract The metal organic chemical vapour deposition (MOCVD) method was used to prepare titanium dioxide thin films. Thin films of TiO2, about 100 nm thick, were deposited on (100)Si and (1102)Al2O3 sapphire substrates using titanium isopropoxide (Ti(OC3H7)4) as metal organic precursor. The morphology of the films and the presence of impurities on the thin films surfaces were studied using respectively, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The influence of the growth parameters such as the deposition temperature, the carrier gas (nitrogen) flow rate and the presence of an additional oxygen flow on the characteristics of the titanium dioxide films h…
Superficial defects induced by argon and oxygen bombardments on (110) TiO2 surfaces
Abstract Compositional and chemical changes of titanium dioxide monocrystalline surfaces induced by bombardment with 4 keV argon and oxygen ions have been studied by AES, XPS and AFM. Argon ion bombardment induced strong changes in the composition and chemical state of the surface: loss of oxygen due to preferential sputtering occurred, and, related to this, Ti4+ species were reduced to Ti3+ and Ti2+. During oxygen bombardment, competition between preferential sputtering of oxygen ions of the oxide surface and oxygen implantation was observed. This phenomenon was found to be strongly dependent upon the incidence angle of the oxygen ions. Moreover, an oxygen bombardment with normal incidence…