0000000000162016

AUTHOR

Rosario Raciti

showing 2 related works from this author

Growth kinetics of colloidal Ge nanocrystals for light harvesters

2016

Colloidal Ge nanocrystals (NCs) are gaining increased interest because of their potential application in low-cost optoelectronic and light harvesting devices. However, reliable control of colloidal NC synthesis is often an issue and a deeper understanding of the key-role parameters governing NC growth is highly required. Here we report an extended investigation on the growth of colloidal Ge NCs synthesized from a one-pot solution based approach. A systematic study of the effects of synthesis time, temperature and precursor concentration is elucidated in detail. X-ray diffraction (XRD) analysis reveals the presence of crystalline Ge NCs with a mean size (from 5 to 35 nm) decreasing with the …

Materials scienceScanning electron microscopePHOTODETECTORSGeneral Chemical EngineeringPhotodetectorNanotechnology02 engineering and technologyActivation energy010402 general chemistry01 natural sciencesSettore ING-INF/01 - ElettronicaColloidDynamic light scatteringPEDOT:PSSGermanium; Quantum dot; PHOTODETECTORSchemistry.chemical_classificationGermaniumQuantum dotGeneral ChemistryPolymer021001 nanoscience & nanotechnology0104 chemical scienceschemistryChemical engineeringNanocrystaloptoelectronic devices colloidal nanocrystals0210 nano-technology
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Light harvesting with Ge quantum dots embedded in SiO2 and Si3N4

2014

Cataloged from PDF version of article. Germanium quantum dots (QDs) embedded in SiO2 or in Si3N4 have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850 degrees C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3-9 nm range in the SiO2 matrix, or in the 1-2 nm range in the Si3N4 matrix, as measured by transmission electron microscopy. Thus, Si3N4 matrix hosts Ge QDs at higher density and more closely spaced than SiO2 matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs e…

Light-harvestingMaterials sciencegenetic structuresBand gapAnalytical chemistryGeneral Physics and AstronomyPhotodetectorchemistry.chemical_elementGermaniumGermanium NanocrystalsSettore ING-INF/01 - Elettronicasymbols.namesakeGe quantum dotPlasma-enhanced chemical vapor depositionThin filmFilmsbusiness.industrySilicon-nitridechemistryQuantum dotsymbolsOptoelectronicsQuantum efficiencyMechanismbusinessRaman spectroscopyConfinement
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